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DST3060DJF PDF预览

DST3060DJF

更新时间: 2024-11-06 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 开关二极管
页数 文件大小 规格书
3页 415K
描述
Littelfuse DST系列超低VF肖特基势垒整流器旨在通过提供耐高温、低泄漏和VF更低的产品,达到商业和工业应用的一般要求。 非常适合高频开关电源、续流二极管和极性保护二极管。 功能与特

DST3060DJF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DFNWB5X6-8L, 8 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.76
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.77 VJESD-30 代码:R-PDSO-F5
最大非重复峰值正向电流:240 A元件数量:1
相数:1端子数量:5
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:60 V最大反向电流:6000 µA
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

DST3060DJF 数据手册

 浏览型号DST3060DJF的Datasheet PDF文件第2页浏览型号DST3060DJF的Datasheet PDF文件第3页 
Schottky Barrier Rectifier  
DST3060DJF, 30A, 60V, PDFN5x6-8L, Single  
Pb  
RoHS  
DST3060DJF  
Description  
Littelfuse DST series Ultra Low VF Schottky Barrier  
Rectifier is designed to meet the general requirements  
of commercial and industry applications by providing high  
temperature, low leakage and low VF products.  
It is suitable for high frequency switching mode power  
supply applications, as free-wheeling and polarity  
protection diodes.  
Features  
• Ultra low forward voltage  
drop  
• Guard ring for enhanced  
ruggedness and long  
term reliability  
Schematic  
• High frequency operation  
• Single die in  
PDFNWB5×6-8L package  
• High junction  
temperature capability  
123  
Anode  
5678  
Cathode  
Applications  
Pin out  
• Switching mode power  
supply  
• Free-Wheeling diodes  
• Polarity Protection Diodes  
5
1
6
7
8
4
• DC/DC converters  
Pin  
Function  
Anode  
1,2,3  
4
open  
5,6,7,8  
Cathode  
3
2
Maximum Ratings  
Parameters  
Symbol  
Test Conditions  
Max  
Unit  
Peak Inverse Voltage  
VRWM  
-
60  
V
50% duty cycle @T =80°C  
rectangular waveCform  
Average Forward Current (per device)  
IF(AV)  
IFSM  
30  
A
A
Peak One Cycle Non-Repetitive Surge  
Current (per diode)  
240  
8.3 ms, half Sine pulse  
Electrical Characteristics  
Parameters  
Symbol  
VF1  
Test Conditions  
Max  
0.77  
0.72  
6
Unit  
@30A, Pulse, TJ = 25 °C  
@30A, Pulse, TJ = 125 °C  
@VR = rated VR TJ = 25 °C  
@VR = rated VR TJ = 125 °C  
Forward Voltage Drop (per diode)*  
V
VF2  
IR1  
Reverse Current (per diode)*  
mA  
IR2  
190  
* Pulse Width < 300μs, Duty Cycle <2%  
©2018 Littelfuse, Inc  
Specifications are subject to change without notice.  
Revised:03/07/18  

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