5秒后页面跳转
DSS16 PDF预览

DSS16

更新时间: 2024-09-24 12:57:15
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 318K
描述
1A Patch Schottky diode 60V S0D-123 series

DSS16 数据手册

 浏览型号DSS16的Datasheet PDF文件第2页 
DSS12 - DSS120  
SURFACE MOUNT SCHOTTKY BARRIER DIODES  
VOLTAGE RANGE: 20 - 200V  
CURRENT: 1.0 A  
Features  
!
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
!
!
Metal silicon junction,majority carrier conduction  
Low power loss,high efficiency  
High forward surge current capability  
High temperature soldering guaranteed:  
!
!
B
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
C
E
SOD-123FL  
Mechanical Data  
Dim Min Max  
Typ  
3.58 3.72 3.65  
2.72 2.78 2.75  
1.77 1.83 1.80  
1.02 1.08 1.05  
0.097 1.03 1.00  
0.13 0.17 0.15  
0.53 0.57 0.55  
Case: JEDEC SOD-123FL molded  
plastic body over passivated junction  
!
A
B
C
D
E
H
L
Terminals  
!
!
: Plated axial leads,  
D
H
Method 2026  
solderable per MIL-STD-750,  
L
Polarity  
!
!
: Color band denotes cathode end  
Mounting Position  
: Any  
All Dimensions in mm  
E
Weight  
:0.0007 ounce, 0.02 grams  
!
A
Maximum Ratings and Electrical Characteristics  
TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
DSS17  
Unit  
DSS18 DSS19 DSS110 DSS115 DSS120  
DSS12 DSS13 DSS14 DSS15 DSS16  
Characteristic  
Maximum repetitive peak reverse voltage  
20  
30  
40  
50  
60  
70  
80  
90  
100  
150  
200  
VRRM  
V
Maximum RMS voltage  
14  
20  
21  
30  
28  
40  
35  
50  
42  
60  
49  
70  
56  
80  
63  
90  
70  
105  
150  
140  
200  
V
V
V
RMS  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VDC  
I(AV)  
A
1.0  
Peak forward surge current  
IFSM  
VF  
25.0  
A
V
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Maximum instantaneous forward voltage at 1.0A  
0.55  
110  
0.70  
0.85  
0.95  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
0.5  
0.2  
2.0  
mA  
pF  
IR  
5.0  
80  
TA=100 C  
10.0  
Typical junction capacitance (NOTE 1)  
CJ  
Operating junction temperature range  
Storage temperature range  
-65 to +125  
-65 to +150  
TJ  
TSTG  
C
C
-65 to +150  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  

与DSS16相关器件

型号 品牌 获取价格 描述 数据表
DSS16-0035A LITTELFUSE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-220AC, TO-220A
DSS16-0035AS LITTELFUSE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-263AB, TO-263A
DSS16-0035B LITTELFUSE

获取价格

Rectifier Diode, Schottky, 1 Element, 16A, 35V V(RRM),
DSS16-0045A IXYS

获取价格

Power Schottky Rectifier
DSS16-0045A LITTELFUSE

获取价格

肖特基低漏电流系列提供各种封装,漏电流改进,击穿电压高达200V。
DSS16-0045AS IXYS

获取价格

Power Schottky Rectifier
DSS16-0045B IXYS

获取价格

Power Schottky Rectifier
DSS16-0045BS IXYS

获取价格

暂无描述
DSS16-01A IXYS

获取价格

Power Schottky Rectifier
DSS16-01A LITTELFUSE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon, TO-220AC, TO-220