DSR1A THRU DSR1M
SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current -
1.0 Ampere
SOD-123FL
FEATURES
Cathode Band
Top View
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
2.8±0.1
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.6±0.25
MECHANICAL DATA
Case : JEDEC SOD-123FL molded plastic body over passivated chip
Terminals : Solderable per MIL-STD-750,
Method 2026
3.7±0.2
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight :0.006 ounce, 0.02 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
DSR1B DSR1D
SYMBOLS DSR1A
DSR1G DSR1J DSR1K DSR1M
UNITS
MDD Catalog
Number
S1A
S1B
100
70
S1D
200
140
200
S1G
S1J
600
420
600
S1K
800
560
800
S1M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VOLTS
VOLTS
VOLTS
50
35
50
VRRM
VRMS
VDC
400
280
400
1000
700
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=65 C (NOTE 1)
1000
I(AV)
1.0
Amp
Peak forward surge current
IFSM
25.0
1.1
8.3ms single half sine-wave superimposed on
Amps
Volts
rated load (JEDEC Method)
TL=25 C
VF
IR
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
10.0
50.0
µ
A
TA=125 C
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
CJ
RθJA
pF
K/W
C
4
180
Operating junction and storage temperature range
TJ,TSTG
-55 to +150
Note:
1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC