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DSR1DS1D PDF预览

DSR1DS1D

更新时间: 2024-09-25 12:55:27
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
2页 124K
描述
SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

DSR1DS1D 数据手册

 浏览型号DSR1DS1D的Datasheet PDF文件第2页 
DSR1A THRU DSR1M  
SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
1.0 Ampere  
SOD-123FL  
FEATURES  
Cathode Band  
Top View  
Glass passivated device  
Ideal for surface mouted applications  
Low reverse leakage  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
2.8±0.1  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.6±0.25  
MECHANICAL DATA  
Case : JEDEC SOD-123FL molded plastic body over passivated chip  
Terminals : Solderable per MIL-STD-750,  
Method 2026  
3.7±0.2  
Polarity : Color band denotes cathode end  
Mounting Position : Any  
Weight :0.006 ounce, 0.02 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
DSR1B DSR1D  
SYMBOLS DSR1A  
DSR1G DSR1J DSR1K DSR1M  
UNITS  
MDD Catalog  
Number  
S1A  
S1B  
100  
70  
S1D  
200  
140  
200  
S1G  
S1J  
600  
420  
600  
S1K  
800  
560  
800  
S1M  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
VRRM  
VRMS  
VDC  
400  
280  
400  
1000  
700  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TA=65 C (NOTE 1)  
1000  
I(AV)  
1.0  
Amp  
Peak forward surge current  
IFSM  
25.0  
1.1  
8.3ms single half sine-wave superimposed on  
Amps  
Volts  
rated load (JEDEC Method)  
TL=25 C  
VF  
IR  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
10.0  
50.0  
µ
A
TA=125 C  
Typical junction capacitance (NOTE 2)  
Typical thermal resistance (NOTE 3)  
CJ  
RθJA  
pF  
K/W  
C
4
180  
Operating junction and storage temperature range  
TJ,TSTG  
-55 to +150  
Note:  
1.Averaged over any 20ms period.  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
MDD ELECTRONIC  

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