Datasheet > DSK5J01

DSK5J01

更新时间： 2024-09-24 12:50:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	487K
描述
Silicon N-channel Junction FET

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中文翻译

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数据手册

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DSK5J01 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSK5J01

Silicon N-channel Junction FET

For low frequency ampliﬁcation

For pyroelectric sensor

 Features

 Package

 High gate-drain voltage (source open) V_GDO

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

ꢀCode

SMini3-F2-B

ꢀPin Name

1: Source

2: Drain

 Packaging

3: Gate

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Marking Symbol: B6

 Absolute Maximum Ratings T_a= 25°C

Parameter

Gate-drain breakdown voltage

Drain current

Symbol

V_GDS

I_D

Rating

–55

Unit

°C

Gate current

I_G

Power dissipation

P_D

150

Channel temperature

Storage temperature

150

stg

–55 to +150

°C

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–55

1.0

Typ

Max

Unit

Gate-drain breakdown voltage

Drain-source cutoff current ^*

V_GDSI_G= –100 mA, V_DS= 0

I_DSS

I_GSS

V_DS= 10 V, V_GS= 0

12.0

–10

–5

Gate-source cutoff current

V_GS= –30 V, V_DS= 0

Gate-source cutoff voltage

V_GSCV_DS= 10 V, I_D= 10 mA

Forward transfer admittance

V_DS= 10 V, I_D= 5 mA, f = 1 MHz

2.5

7.5

6.0

2.5

Y_fs

C_iss

Short-circuit input capacitance (Common source)

Reverse transfer capacitance (Common source)

V_DS= 10 V, V_GS= 0, f = 1 MHz

C_rss

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classiﬁcation

Code

Rank

I_DSS

1.0 to 3.0

B6P

2.0 to 6.5

B6Q

5.0 to 12.0

B6R

Marking Symbol

Publication date: November 2010

Ver. AED

12 3 4

中文翻译

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