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DSI30-08AS-TRL PDF预览

DSI30-08AS-TRL

更新时间: 2024-11-20 13:07:27
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 52K
描述
Rectifier Diode,

DSI30-08AS-TRL 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.69二极管类型:RECTIFIER DIODE
Base Number Matches:1

DSI30-08AS-TRL 数据手册

 浏览型号DSI30-08AS-TRL的Datasheet PDF文件第2页 
DSI 30  
VRRM = 800-1600 V  
IF(AV)M = 30 A  
Rectifier Diode  
TO-263 AA  
VRSM  
V
VRRM  
V
TO-220  
TO-263  
A
C
A
A
900  
800  
DSI 30-08A  
DSI 30-12A  
DSI 30-14A  
DSI 30-16A  
DSI 30-08AS  
DSI 30-12AS  
DSI 30-14AS  
DSI 30-16AS  
C (TAB)  
1300  
1500  
1700  
1200  
1400  
1600  
TO-220 AC  
C
A
Symbol  
IF(AV)M  
IFSM  
Conditions  
Maximum Ratings  
C (TAB)  
TC = 95°C; 180° sine  
30  
A
A = Anode, C = Cathode, TAB = Cathode  
TVJ = 45°C;  
VR = 0 V;  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
300  
330  
A
A
Features  
International standard packages  
JEDEC TO-263 AA surface mountable  
Planar passivated chips  
Epoxy meets UL 94V-0 flammability  
classification  
TVJ = 150°C;  
VR = 0 V;  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
270  
300  
A
A
I2t  
TVJ = 45°C;  
VR = 0 V;  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
450  
460  
A2s  
A2s  
TVJ = 150°C;  
VR = 0 V;  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
365  
380  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
TO-263 AA Outline  
Md  
Mounting torque  
0.4...0.6  
2
Nm  
g
Weight  
Symbol  
Conditions  
Characteristic Values  
IR  
TVJ = TVJM; VR = VRRM  
IF = 45 A; TVJ = 25°C  
£
£
1
mA  
V
VF  
1.45  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.85  
13  
V
mW  
RthJC  
DC current  
1.0  
K/W  
TO-220 Outline  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
B
12.70 14.73 0.500 0.580  
14.23 16.51 0.560 0.650  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
C
D
9.66 10.66 0.380 0.420  
3.54 4.08 0.139 0.161  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
E
F
5.85 6.85 0.230 0.420  
2.54 3.42 0.100 0.135  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
G
H
1.15 1.77 0.045 0.070  
-
6.35  
-
0.250  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
J
K
0.64 0.89 0.025 0.035  
4.83 5.33 0.190 0.210  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
L
M
3.56 4.82 0.140 0.190  
0.38 0.56 0.015 0.022  
N
Q
2.04 2.49 0.080 0.115  
0.64 1.39 0.025 0.055  
R
0.46  
0.74  
.018  
.029  
Data according to IEC 60747 and refer to a single diode  
IXYS reserves the right to change limits, test conditions and dimensions  
1 - 2  
© 2000 IXYS All rights reserved  

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