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DSF05S30U PDF预览

DSF05S30U

更新时间: 2024-09-30 06:54:43
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管光电二极管
页数 文件大小 规格书
3页 178K
描述
Diode Silicon Epitaxial Schottky Barrier Type

DSF05S30U 技术参数

生命周期:Active包装说明:USC, 1-1E1A, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.71Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

DSF05S30U 数据手册

 浏览型号DSF05S30U的Datasheet PDF文件第2页浏览型号DSF05S30U的Datasheet PDF文件第3页 
DSF05S30U  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
DSF05S30U  
High Speed Switching Application  
Unit: mm  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Reverse voltage  
Symbol  
Rating  
Unit  
V
30  
500  
5
V
mA  
A
R
Average forward current  
Surge current (10ms)  
I
O
I
FSM  
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 125  
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,  
pad dimensions of 4 × 4 mm.  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
USC  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
TOSHIBA  
1-1E1A  
Weight: 4.5 mg (typ.)  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 10mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.23  
0.35  
0.40  
5.3  
F (1)  
F (2)  
F (3)  
R(1)  
F
F
F
Forward voltage  
= 200mA  
= 500mA  
0.45  
50  
Reverse current  
I
V
V
= 30V  
R
R
μA  
Total capacitance  
C
T
= 0, f = 1 MHz  
120  
pF  
Marking  
Equivalent Circuit (top view)  
FP  
Handling Precaution  
Schottky barrier diodes have reverse current characteristic compared to the other diodes.  
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.  
Please take forward and reverse loss into consideration during design.  
2009-05-11  
1

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