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DSEP30-06B PDF预览

DSEP30-06B

更新时间: 2024-10-30 03:30:39
品牌 Logo 应用领域
IXYS 整流二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
3页 68K
描述
HiPerFRED Epitaxial Diode with soft recovery

DSEP30-06B 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:R-PSFM-T2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:SNUBBER DIODE, FREE WHEELING DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.52 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:250 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEP30-06B 数据手册

 浏览型号DSEP30-06B的Datasheet PDF文件第2页浏览型号DSEP30-06B的Datasheet PDF文件第3页 
DSEP 30-06A  
DSEP 30-06BR DSEP 30-06B  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 30 A  
VRRM = 600 V  
trr  
= 30/35 ns  
ISOPLUS 247TM  
VRSM  
V
VRRM  
V
Type  
TO-247 AD  
Version A  
A
C
Version BR  
600  
600  
600  
600  
600  
600  
DSEP 30-06A  
DSEP 30-06B  
DSEP 30-06BR  
C
A
C
A
C (TAB)  
Isolated  
back surface  
A = Anode, C = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
• International standard package  
• Planar passivated chips  
• Very short recovery time  
• Extremely low switching losses  
• Low IRM-values  
• Soft recovery behaviour  
• Epoxy meets UL 94V-0  
• Version ..R isolated and  
UL registered E153432  
IFRMS  
IFAVM  
70  
30  
A
A
rect., d = 0.5; TC (Vers. A) = 135°C  
TC (Vers. B) = 125°C; TC (Vers. BR) = 115°C  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
250  
0.2  
A
TVJ = 25°C; non-repetitive  
IAS = 1.3 A; L = 180 µH  
mJ  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.1  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Applications  
• Antiparallel diode for high frequency  
switching devices  
• Antisaturation diode  
Ptot  
TC = 25°C  
(Vers. BR)  
165  
135  
W
W
• Snubber diode  
Md*  
FC  
mounting torque  
mounting force with clip  
0.8...1.2  
20...120  
Nm  
N
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Inductive heating  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
VISOL **  
50/60 Hz, RMS, t = 1 minute, leads-to-tab  
typical  
2500  
6
V~  
g
Weight  
* Verson A only; ** Version BR only  
Symbol  
Conditions  
Characteristic max. Values  
Vers. A Vers. B  
Advantages  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
250  
1
250  
2
µA  
mA  
• Avalanche voltage rated for reliable  
operation  
• Soft reverse recovery for low  
EMI/RFI  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
1.25  
1.60  
1.56  
2.51  
V
V
• Low IRM reduces:  
- Power dissipation within the diode  
- Turn-onlossinthecommutatingswitch  
RthJC  
RthJC  
RthCH  
0.9  
0.9  
1.1  
0.25  
K/W  
K/W  
K/W  
Version BR  
typ.  
0.25  
35  
trr typ.  
IF = 1 A; -di/dt = 200 A/µs;  
VR = 30 V; TVJ = 25°C  
30  
ns  
Dimensions see Outlines.pdf  
IRM typ.  
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs  
TVJ = 100°C  
6
4
A
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 µs, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 3  

DSEP30-06B 替代型号

型号 品牌 替代类型 描述 数据表
DSEI30-12A IXYS

类似代替

Fast Recovery Epitaxial Diode (FRED)
DSEP60-12A IXYS

类似代替

HiPerFRED Epitaxial Diode with soft recovery
DSEI60-12A IXYS

类似代替

Fast Recovery Epitaxial Diode (FRED)

与DSEP30-06B相关器件

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DSEP30-12A IXYS

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DSEP30-12A LITTELFUSE

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HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP30-12AR IXYS

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DSEP30-12AR LITTELFUSE

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DSEP30-12B IXYS

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Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-247,
DSEP30-12B LITTELFUSE

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Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-247,
DSEP30-12CR IXYS

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HiPerDynFRED with soft recovery (Electrically Isolated Back Surface)