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DSEP30-04A PDF预览

DSEP30-04A

更新时间: 2024-01-04 18:27:52
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 37K
描述
HiPerFREDTM Epitaxial Diode with soft recovery

DSEP30-04A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.78
其他特性:FREE WHEELING DIODE, SNUBBER DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.46 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T2元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEP30-04A 数据手册

 浏览型号DSEP30-04A的Datasheet PDF文件第2页 
DSEP 30-04A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 30 A  
VRRM = 400 V  
trr = 30 ns  
Preliminary Data  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
400  
400  
DSEP 30-04A  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
70  
30  
A
A
TC = 140°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
tbd  
tbd  
A
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
TVJ = 25°C; non-repetitive  
IAS = tbd A; L = tbd µH  
mJ  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
tbd  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Epoxy meets UL 94V-0  
Ptot  
TC = 25°C  
mounting torque  
typical  
165  
0.8...1.2  
6
W
Nm  
g
Md  
Applications  
Weight  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
250  
1
mA  
mA  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
1.11  
1.46  
V
V
RthJC  
RthCH  
0.9  
K/W  
K/W  
0.25  
30  
Advantages  
trr  
IF = 1 A; -di/dt = 300 A/ms;  
ns  
VR = 30 V; TVJ = 25°C  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
5.5  
6.8  
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
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