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DSEP2X61-12A PDF预览

DSEP2X61-12A

更新时间: 2024-09-28 09:57:03
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页数 文件大小 规格书
2页 43K
描述
HiPerFRED-TM Epitaxial Diode with soft recovery

DSEP2X61-12A 技术参数

是否无铅:不含铅生命周期:Transferred
包装说明:R-PUFM-X4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.05
Is Samacsys:N其他特性:FREE WHEELING DIODE, SNUBBER DIODE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.53 V
JESD-30 代码:R-PUFM-X4最大非重复峰值正向电流:800 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:210 W认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向电流:1000 µA
最大反向恢复时间:0.04 µs反向测试电压:1200 V
子类别:Other Diodes表面贴装:NO
技术:AVALANCHE端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEP2X61-12A 数据手册

 浏览型号DSEP2X61-12A的Datasheet PDF文件第2页 
DSEP 2x 61-12A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 2x 60 A  
VRRM = 1200 V  
trr = 40 ns  
miniBLOC, SOT-227 B  
VRSM  
V
VRRM  
V
Type  
1200  
1200  
DSEP 2x 61-12A  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
100  
60  
A
A
TC = 80°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
800  
28  
A
International standard package  
TVJ = 25°C; non-repetitive  
IAS = 16 A; L = 180 µH  
mJ  
miniBLOC  
Isolation voltage 2500 V~  
UL registered E 72873  
2 independent FRED in 1 package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
IAR  
VA = 1.25·VR typ.; f = 10 kHz; repetitive  
1.6  
A
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
200  
W
VISOL  
50/60 Hz, RMS  
2500  
V~  
Soft recovery behaviour  
IISOL £ 1 mA  
Applications  
Md  
mounting torque (M4)  
terminal connection torque (M4)  
1.1-1.5/9-13  
1.1-1.5/9-13  
Nm/lb.in.  
Nm/lb.in.  
Antiparallel diode for high frequency  
Weight  
typical  
30  
g
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
1
4
mA  
mA  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
VF  
IF = 60 A;  
TVJ = 125°C  
TVJ = 25°C  
1.70  
2.42  
V
V
RthJC  
RthCH  
0.6  
K/W  
K/W  
Advantages  
0.1  
40  
trr  
IF = 1 A; -di/dt = 400 A/ms;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 200 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
8
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  

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