Datasheet > DSEI12-12AZ

DSEI12-12AZ

更新时间： 2024-04-18 10:34:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	438K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

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数据手册

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DSEI12-12AZ 数据手册

DSEI12-12AZ

V_RRM

I_FAV

t_rr

1200V

12A

FRED

50ns

Fast Recovery Epitaxial Diode

Single Diode

Part number

DSEI12-12AZ

Marking on Product: DSEI12-12AZ

Backside: cathode

TO-263 (D2Pak-HV)

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Low leakage current

● Antiparallel diode for high frequency

switching devices

● Industry standard outline

● RoHS compliant

● Very short recovery time

● Antisaturation diode

● Epoxy meets UL 94V-0

● Improved thermal behaviour

● Very low Irm-values

● Snubber diode

● Free wheeling diode

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20210721e

12 3 4 5

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