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DSEI12-12AZ PDF预览

DSEI12-12AZ

更新时间: 2024-11-18 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 438K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DSEI12-12AZ 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.74其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.6 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:70 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:78 W参考标准:IEC-60747
最大重复峰值反向电压:1200 V最大反向电流:250 µA
最大反向恢复时间:0.07 µs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEI12-12AZ 数据手册

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DSEI12-12AZ  
=
VRRM  
IFAV  
trr  
1200V  
12A  
FRED  
=
=
50ns  
Fast Recovery Epitaxial Diode  
Single Diode  
Part number  
DSEI12-12AZ  
Marking on Product: DSEI12-12AZ  
Backside: cathode  
3
1
TO-263 (D2Pak-HV)  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Low leakage current  
Antiparallel diode for high frequency  
switching devices  
Industry standard outline  
RoHS compliant  
Very short recovery time  
Antisaturation diode  
Epoxy meets UL 94V-0  
Improved thermal behaviour  
Very low Irm-values  
Snubber diode  
Free wheeling diode  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20210721e  
© 2021 IXYS all rights reserved  

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