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DSC9001

更新时间: 2024-11-24 21:22:15
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 530K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN

DSC9001 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

DSC9001 数据手册

 浏览型号DSC9001的Datasheet PDF文件第2页浏览型号DSC9001的Datasheet PDF文件第3页浏览型号DSC9001的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSC9001  
Silicon NPN epitaxial planar type  
For general amplication  
Complementary to DSA9001  
DSC5001 in SSMini3 type package  
Features  
Package  
Code  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
High forward current transfer ratio hFE with excellent linearity  
Eco-friendly Halogen-free package  
SSMini3-F3-B  
Pin Name  
1. Base  
2. Emitter  
3. Collector  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: C1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
7
V
V
100  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
200  
Collector power dissipation  
Junction temperature  
PC  
125  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio *  
VCBO IC = 10 mA, IE = 0  
VCEO IC = 2 mA, IB = 0  
VEBO IE = 10 mA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = 20 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = 10 V, IC = 2 mA  
0.1  
100  
460  
0.3  
mA  
mA  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 100 mA, IB = 10 mA  
0.13  
150  
V
fT  
VCE = 10 V, IC = 2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
1.5  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classication  
*
Code  
Rank  
R
R
S
S
0
No-rank  
210 to 460  
C1  
hFE  
210 to 340  
C1R  
290 to 460  
C1S  
Marking Symbol  
Product of no-rank is not classied and have no marking symbol for rank.  
Publication date: January 2011  
Ver. CED  
1

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