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DSC2C0100L PDF预览

DSC2C0100L

更新时间: 2024-09-14 20:11:27
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 540K
描述
Small Signal Bipolar Transistor

DSC2C0100L 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Base Number Matches:1

DSC2C0100L 数据手册

 浏览型号DSC2C0100L的Datasheet PDF文件第2页浏览型号DSC2C0100L的Datasheet PDF文件第3页浏览型号DSC2C0100L的Datasheet PDF文件第4页 
DSC2C01  
Silicon NPN epitaxial planar type  
For low frequency amplication  
Features  
Package  
Code  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Mini3-G3-B  
Pin Name  
1. Base  
2. Emitter  
3. Collector  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: C9  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
100  
100  
V
15  
V
20  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
50  
Collector power dissipation  
Junction temperature  
PC  
200  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
100  
100  
15  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio *  
VCBO IC = 10 mA, IE = 0  
VCEO IC = 1 mA, IB = 0  
VEBO IE = 10 mA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = 60 V, IE = 0  
VCE = 60 V, IB = 0  
VCE = 10 V, IC = 2 mA  
0.1  
1
mA  
mA  
400  
1200  
0.20  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 10 mA, IB = 1 mA  
fT VCE = 10 V, IC = 2 mA  
0.05  
140  
V
MHz  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classication  
*
Code  
Rank  
R
R
S
S
hFE  
400 to 800  
C9R  
600 to 1200  
C9S  
Marking Symbol  
Publication date: July 2010  
ZJC00469AED  
1

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Easy to Configure using SMS commands.