Datasheet > DSB40C15PB

DSB40C15PB

更新时间： 2024-11-25 12:53:19

品牌	Logo	应用领域
IXYS		肖特基二极管
页数	文件大小	规格书
3页	90K
描述
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

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中文翻译

获取价格

数据手册
替代型号

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DSB40C15PB 数据手册

DSB 40 C 15 PB

advanced

V_RRM

I_FAV= 2x

V_F

15 V

Schottky Diode

High Performance Schottky Diode

Low Loss and Soft Recovery

Common Cathode

0.39 V

Part number

DSB 40 C 15 PB

Backside: cathode

Features / Advantages:

Applications:

Package:

● Very low Vf

● Extremely low switching losses

● low Irm values

● Improved thermal behaviour

● High reliability circuit operation

● Low voltage peaks for reduced

protection circuits

● Rectifiers in switch mode power

supplies (SMPS)

● Free wheeling diode in low voltage

converters

● Housing: TO-220

●rIndustry standard outline

●rEpoxy meets UL 94V-0

●rRoHS compliant

● Low noise switching

R a t i n g s

Symbol

V_RRM

I_R

Definition

Conditions

min. typ. max. Unit

T_VJ

max. repetitive reverse voltage

reverse current

25°C

V_R= 15V

µA

_VJ= 100°C

40 mA

forward voltage

V_F

T_VJ25°C

0.48

I_F

20A

40A

20A

40A

0.60

0.39

0.54

_VJ= 125°C

I_FAV

V_F0

r_F

T_C= 130°C

T_VJ= 150°C

average forward current

threshold voltage

rectangular, d = 0.5

0.23

7.2

for power loss calculation only

slope resistance

R_thJC

T_VJ

P_tot

I_FSM

C_J

1.75 K/W

thermal resistance junction to case

virtual junction temperature

total power dissipation

-55

150

°C

T_C

25°C

45°C

25°C

(50 Hz), sine

max. forward surge current

junction capacitance

160

t = 10 ms

T_VJ

V_R= tbdV; f = 1 MHz

tbd

IXYS reserves the right to change limits, conditions and dimensions.

20080222

Data according to IEC 60747and per diode unless otherwise specified

12 3

中文翻译

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DSB40C15PB 替代型号

型号	品牌	替代类型	描述	数据表
DSA20C150PB	IXYS	类似代替	High Performance Schottky Diode
DPG20C300PN	IXYS	类似代替	High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
DSEC16-12A	IXYS	类似代替	HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

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