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DSB2I40SB PDF预览

DSB2I40SB

更新时间: 2024-11-25 19:53:47
品牌 Logo 应用领域
IXYS 软恢复二极管光电二极管
页数 文件大小 规格书
2页 89K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

DSB2I40SB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.57
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE应用:SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:75 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSB2I40SB 数据手册

 浏览型号DSB2I40SB的Datasheet PDF文件第2页 
DSB 2 I 40 SB  
advanced  
VRRM  
IFAV  
=
=
40 V  
2 A  
Schottky  
High Performance Schottky Diode  
Low Loss and Soft Recovery  
Single Diode  
VF = 0.42 V  
(Marking on product)  
Part number  
DSB 2 I 40 SB  
(S2FBB)  
Features / Advantages:  
Applications:  
Package:  
Very low Vf  
Extremely low switching losses  
Low Irm-values  
Improved thermal behaviour  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
SMB (DO-214AA)  
Industry standard outline  
Epoxy meets UL 94V-0  
RoHS compliant  
Decoupling diode  
Low noise switching  
Low losses  
R a t i n g s  
Unit  
Symbol  
VRRM  
Definition  
Conditions  
min.  
typ.  
max.  
max. repetitive reverse voltage  
=
=
25 °C  
25 °C  
40  
V
TVJ  
reverse current  
forward voltage  
IR  
VR = 40 V  
VR = 40 V  
0.1  
25  
TVJ  
TVJ  
mA  
mA  
= 125 °C  
IF  
IF  
=
=
2 A  
4 A  
0.50  
0.60  
VF  
V
V
TVJ  
TVJ  
=
=
25°C  
IF  
IF  
=
=
2 A  
4 A  
0.42  
0.52  
V
V
125  
°C  
average forward current  
threshold voltage  
IFAV  
rectangular, d = 0.5  
TL = 125 °C  
TL = 150 °C  
2
A
V
V
F0  
for power loss calculation only  
slope resistance  
r F  
m
thermal resistance junction to lead*  
virtual junction temperature  
total power dissipation  
RthJL  
TVJ  
25  
150  
5
K/W  
°C  
-55  
Ptot  
=
25 °C  
W
TL  
max. forward surge current  
junction capacitance  
IFSM  
CJ  
tp = 10 ms (50 Hz), sine  
VR = 5V; f = 1 MHz  
TVJ  
TVJ  
TVJ  
=
=
=
45 °C  
25°C  
25 °C  
75  
150  
tbd  
tbd  
A
pF  
mJ  
A
non-repetitive avalanche energy  
repetitive avalanche current  
EAS  
IAR  
IAS  
=
A; L = 100 µH  
f = 10 kHz  
V = 1.5·V typ.;  
R
A
* mounted on 1 inch square PCB  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747 and per diode unless otherwise specified  
© 2006 IXYS all rights reserved  

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