生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 表面贴装: | NO |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DSB2810E3 | MICROSEMI |
获取价格 |
Schottky Barrier Diode Qualified per MIL-PRF-19500/444 | |
DSB2I40SB | IXYS |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, DO-214AA, ROHS COM | |
DSB2I40SB | LITTELFUSE |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, DO-214AA, ROHS COM | |
DSB2I60SB | IXYS |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, ROHS COM | |
DSB-300 | AXIOMTEK |
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Sn Dust-proof design | |
DSB30C30PB | IXYS |
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High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode | |
DSB30C30PB | LITTELFUSE |
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肖特基低Vf系列提供改进的正向电压特性和高达150V的击穿电压。 | |
DSB30C45HB | LITTELFUSE |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-247AD, ROHS CO | |
DSB30C45HB | IXYS |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-247AD, ROHS CO | |
DSB30C45PB | LITTELFUSE |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ROHS CO |