Datasheet > DSA2G0100L

DSA2G0100L

更新时间： 2024-01-28 10:14:39

品牌	Logo	应用领域
松下 - PANASONIC		放大器光电二极管晶体管
页数	文件大小	规格书
4页	756K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN

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DSA2G0100L 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.73
最大集电极电流 (IC)：	0.03 A	集电极-发射极最大电压：	20 V
配置：	SINGLE	最小直流电流增益 (hFE)：	70
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	300 MHz	Base Number Matches：	1

DSA2G0100L 数据手册

DSA2G01

Silicon PNP epitaxial planar type

Unit: mm

For high-frequency ampliﬁcation

 Features

 High transition frequency f_T

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

 Marking Symbol: A4

 Packaging

DSA2G01×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–30

Unit

1: Base

2: Emitter

3: Collector

Panasonic

JEITA

–20

Mini3-G3-B

–5

SC-59A

–30

°C

Code

TO-236AA/SOT-23

Collector power dissipation

Junction temperature

P_C

200

T_j

150

Operating ambient temperature

Storage temperature

T_opr

–40 to +85

–55 to +150

stg

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Base-emitter voltage

Symbol

Conditions

Min

Typ

Max

Unit

V_BE

I_CBO

I_CEO

I_EBO

h_FE

V_CE= –10 V, I_C= –1 mA

V_CB= –10 V, I_E= 0

– 0.7

µA



Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

– 0.1

–100

–10

V_CE= –20 V, I_B= 0

V_EB= –5 V, I_C= 0

Forward current transfer ratio ^*

V_CE= –10 V, I_C= –1 mA

220

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= –10 mA, I_B= –1 mA

– 0.1

300

f_T

V_CE= –10 V, I_C= –1 mA

150

MHz

Reverse transfer capacitance

(Common emitter)

C_re

V_CE= –10 V, I_C= –1 mA, f = 10.7 MHz

1.0

Noise ﬁgure

Z_rb

V_CE= –10 V, I_C= –1 mA, f = 5 MHz

V_CE= –10 V, I_C= –1 mA, f = 2 MHz

2.8

Reverse transfer impedance

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Rank classiﬁcation

Code

Rank

No-rank

70 to 220

h_FE

70 to 140

A4B

110 to 220

A4C

Marking Symbol

Product of no-rank is not classiﬁed and have no marking symbol for rank.

Publication date: February 2014

Ver. CED

12 3 4

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