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DS_K6X8008TBN PDF预览

DS_K6X8008TBN

更新时间: 2024-09-15 22:21:35
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
9页 131K
描述
CMOS SRAM

DS_K6X8008TBN 数据手册

 浏览型号DS_K6X8008TBN的Datasheet PDF文件第2页浏览型号DS_K6X8008TBN的Datasheet PDF文件第3页浏览型号DS_K6X8008TBN的Datasheet PDF文件第4页浏览型号DS_K6X8008TBN的Datasheet PDF文件第5页浏览型号DS_K6X8008TBN的Datasheet PDF文件第6页浏览型号DS_K6X8008TBN的Datasheet PDF文件第7页 
K6X8008T2B Family  
CMOS SRAM  
Document Title  
1Mx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
October 31, 2002  
Preliminary  
0.1  
Revised  
December 11, 2002 Preliminary  
September 16, 2003 Final  
- Deleted 44-TSOP2-400R package type.  
1.0  
Finalized  
- Changed ICC2 from 40mA to 30mA  
- Changed ISB1(industrial) from 30mA to 15mA  
- Changed ISB1(Automotive) from 40mA to 25mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
September 2003  
1

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