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DS90LV011AQ-Q1 PDF预览

DS90LV011AQ-Q1

更新时间: 2024-10-28 11:06:55
品牌 Logo 应用领域
德州仪器 - TI 驱动线路驱动器或接收器驱动程序和接口
页数 文件大小 规格书
13页 756K
描述
汽车类 LVDS 差动驱动器

DS90LV011AQ-Q1 数据手册

 浏览型号DS90LV011AQ-Q1的Datasheet PDF文件第2页浏览型号DS90LV011AQ-Q1的Datasheet PDF文件第3页浏览型号DS90LV011AQ-Q1的Datasheet PDF文件第4页浏览型号DS90LV011AQ-Q1的Datasheet PDF文件第5页浏览型号DS90LV011AQ-Q1的Datasheet PDF文件第6页浏览型号DS90LV011AQ-Q1的Datasheet PDF文件第7页 
DS90LV011A  
www.ti.com  
SNLS140C MAY 2002REVISED APRIL 2013  
DS90LV011A 3V LVDS Single High Speed Differential Driver  
Check for Samples: DS90LV011A  
1
FEATURES  
DESCRIPTION  
The DS90LV011A is a single LVDS driver device  
optimized for high data rate and low power  
applications. The DS90LV011A is a current mode  
driver allowing power dissipation to remain low even  
at high frequency. In addition, the short circuit fault  
current is also minimized. The device is designed to  
support data rates in excess of 400Mbps (200MHz)  
utilizing Low Voltage Differential Signaling (LVDS)  
technology.  
2
Conforms to TIA/EIA-644-A Standard  
>400Mbps (200MHz) Switching Rates  
700 ps (100 ps Typical) Maximum Differential  
Skew  
1.5 ns Maximum Propagation Delay  
Single 3.3V Power Supply  
±350 mV Differential Signaling  
Power Off Protection (Outputs in TRI-STATE)  
Pinout Simplifies PCB Layout  
The device is in a 5-lead SOT-23 package. The  
LVDS outputs have been arranged for easy PCB  
layout. The differential driver outputs provide low EMI  
with its typical low output swing of 350 mV. The  
DS90LV011A can be paired with its companion single  
line receiver, the DS90LV012A, or with any of TI's  
LVDS receivers, to provide a high-speed LVDS  
interface.  
Low Power Dissipation (23 mW @ 3.3V  
Typical)  
SOT-23 5-Lead Package  
SOT-23 Version Pin Compatible with  
SN65LVDS1  
Fabricated with Advanced CMOS Process  
Technology  
Connection Diagram  
Industrial Temperature Operating Range  
(40°C to +85°C)  
Figure 1. Top View  
See Package Number DBV (R-PDSO-G5)  
Functional Diagram  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2002–2013, Texas Instruments Incorporated  

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