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DS80C320-ECD PDF预览

DS80C320-ECD

更新时间: 2024-02-28 10:26:14
品牌 Logo 应用领域
达拉斯 - DALLAS 微控制器
页数 文件大小 规格书
175页 1090K
描述
High-Speed Microcontroller User Guide

DS80C320-ECD 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:LCC
包装说明:QCCJ,针数:44
Reach Compliance Code:compliantECCN代码:3A991.A.2
HTS代码:8542.31.00.01Factory Lead Time:10 weeks
风险等级:5.12Is Samacsys:N
具有ADC:NO地址总线宽度:16
位大小:8最大时钟频率:33 MHz
DAC 通道:NODMA 通道:NO
外部数据总线宽度:8JESD-30 代码:S-PQCC-J44
JESD-609代码:e3长度:16.585 mm
湿度敏感等级:3I/O 线路数量:32
端子数量:44最高工作温度:85 °C
最低工作温度:-40 °CPWM 通道:NO
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:SQUARE封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260认证状态:Not Qualified
ROM可编程性:MROM座面最大高度:4.572 mm
速度:33 MHz最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:16.585 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER
Base Number Matches:1

DS80C320-ECD 数据手册

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User’s Guide  
….  
High-Speed Microcontroller  
User Guide  
www.dalsemi.com  
SECTION 1: INTRODUCTION  
The Dallas Semiconductor High-Speed Microcontroller is an 8051-compatible device that provides  
improved performance and power consumption compared to the original version. It retains instruction set  
and object code compatibility with the 8051, yet performs the same operations in fewer clock cycles.  
Consequently, more throughput is possible for the same crystal speed. As an alternative, the High-Speed  
Microcontroller can be run slowly to save power. The more efficient design allows a much slower crystal  
speed to get the same results as an original 8051, using much less power.  
The fundamental innovation of the High-Speed Microcontroller is the use of only four clocks per  
instruction cycle compared with twelve for the original 8051. This results in up to 3 times improvement  
in performance. In addition, the High-Speed Microcontroller is updated with several new peripherals and  
features while providing all of the standard features of an 80C32. These include 256 bytes of on-chip  
RAM, 32 I/O ports, three 16-bit timer/counters, and an on-chip UART. All devices provide 256 bytes of  
RAM for variables and stack. 128 bytes can be reached using direct addressing and 128 using indirect  
addressing.  
In addition to improved efficiency, members of the High-Speed Microcontroller family can operate at a  
maximum clock rate of 33 or 40 MHz. Combined with the 3 times performance, this allows for a  
maximum performance equivalent to a 99 or 120 MHz 8051. This level of computing power is  
comparable to many 16-bit processors, but without the added expense and complexity if implementing a  
16-bit interface.  
A number of peripherals were added to the original 80C32 core when designing the High-Speed  
Microcontroller family. Some devices have a programmable watchdog Timer to supervise the system. It  
will count up to a user programmable interval and then reset the CPU unless cleared by software. Other  
features such as a second, full-function UART and dual data pointers are available to minimize external  
interrupts allows greater flexibility in dealing with external events.  
Some members of the High-Speed Microcontroller family incorporate Power Management Modes which  
allow the device to dynamically vary the internal clock speed from 4 clocks per cycle (default) to 64 or  
1024 clocks per cycle. Because power consumption is directly proportional to clock speed, the device  
can reduce its operating frequency during periods of little or no activity. This greatly reduces power  
consumption. The switch-back feature allows the device to quickly return in divide by 4 mode upon  
receipt of an interrupt or serial port activity, allowing the device to respond to external events while in  
Power Management Mode.  
Various memory configurations are available with the High-Speed Microcontroller family. EPROM and  
Mask programmable ROM versions are available for program memory. Some versions incorporate  
extended MOVX SRAM on-chip, reducing or eliminating the need for external data memory. This  
memory can be made nonvolatile in the DS87C530 through the use of an external lithium battery.  
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