DS75-08A

更新时间： 2024-11-21 13:07:27

品牌	Logo	应用领域
IXYS		整流二极管局域网
页数	文件大小	规格书
2页	44K
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数据手册

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DS75-08A 数据手册

DS 75

DSA 75

DSI 75

DSAI 75

V_RRM= 800-1800 V

I_F(RMS)= 160 A

I_F(AV)M= 110 A

Rectifier Diode

Avalanche Diode

DO-203 AB

V_RSM

V_(BR)min① V_RRM

Anode

Cathode

on stud

DSA

DSI

DSAI

900

1300

800

1200

DS75-08B

DS75-12B

DSI75-08B

DSI75-12B

1300

1700

1900

1300

1760

1950

1200

1600

1800

DSA75-12B

DSA75-16B

DSA75-18B

DSAI75-12B

DSAI75-16B

DSAI75-18B

① Only for Avalanche Diodes

1/4-28UNF

A = Anode C = Cathode

Symbol

Test Conditions

T_VJ= T_VJM

T_case= 100°C; 180° sine

Maximum Ratings

I_F(RMS)

I_F(AV)M

160

110

Features

①

International standard package,

JEDEC DO-203 AB (DO-5)

Planar glassivated chips

P_RSM

I_FSM

DSA(I) types, T_VJ= T_VJM, t_p= 10 ms

①

T_VJ= 45°C;

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1400

1500

V_R= 0

Applications

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1250

1310

①

High power rectifiers

Field supply for DC motors

①

I²t

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

9800

9450

A²s

①

Power supplies

Advantages

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

7820

7210

A²s

①

Space and weight savings

Simple mounting

Improved temperature and power

cycling

①

T_VJ

T_VJM

T_stg

-40...+180

180

-40...+180

°C

①

Reduced protection circuits

M_d

Mounting torque

2.4-4.5

21-40

lb.in.

Dimensions in mm (1 mm = 0.0394")

Weight

Symbol

Test Conditions

Characteristic Values

I_R

T_VJ= T_VJM; V_R= V_RRM

I_F= 150 A; T_VJ= 25°C

V_F

1.17

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

0.75

R_thJC

R_thJH

DC current

0.5

0.9

K/W

d_S

d_A

Creepage distance on surface

Strike distance through air

Max. allowable acceleration

4.05

3.9

100

m/s²

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

744

1 - 2

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