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DS3634N PDF预览

DS3634N

更新时间： 2024-11-20 22:40:39
品牌 Logo 应用领域
美国国家半导体 - NSC 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
8页 155K
描述
CMOS Dual Peripheral Drivers

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中文翻译

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DS3634N 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DIP, DIP8,.3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.83Is Samacsys：N
驱动器位数：2输入特性：STANDARD
接口集成电路类型：NOR GATE BASED PERIPHERAL DRIVERJESD-30 代码：R-PDIP-T8
JESD-609代码：e0功能数量：2
端子数量：8最高工作温度：70 °C
最低工作温度：输出特性：OPEN-COLLECTOR
输出电流流向：SINK最大输出电流：0.3 A
标称输出峰值电流：0.3 A封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5/15 V
认证状态：Not Qualified子类别：Peripheral Drivers
最大供电电压：15 V最小供电电压：4.75 V
标称供电电压：5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

DS3634N 数据手册

 浏览型号DS3634N的Datasheet PDF文件第2页浏览型号DS3634N的Datasheet PDF文件第3页浏览型号DS3634N的Datasheet PDF文件第4页浏览型号DS3634N的Datasheet PDF文件第5页浏览型号DS3634N的Datasheet PDF文件第6页浏览型号DS3634N的Datasheet PDF文件第7页 
July 1992  
DS1631/DS3631/DS1632/DS3632/DS1633/DS3633/  
DS1634/DS3634 CMOS Dual Peripheral Drivers  
General Description  
The DS1631 series of dual peripheral drivers was designed  
to be a universal set of interface components for CMOS  
circuits.  
dance OFF state with the same breakdown levels as when  
was applied.  
V
CC  
Pin-outs are the same as the respective logic functions  
found in the following popular series of circuits: DS75451,  
DS75461. This feature allows direct conversion of present  
systems to the MM74C CMOS family and DS1631 series  
circuits with great power savings.  
Each circuit has CMOS compatible inputs with thresholds  
that track as a function of V (approximately (/2 V ). The  
CC CC  
inputs are PNPs providing the high impedance necessary  
for interfacing with CMOS.  
e
5V.  
Outputs have high voltage capability, minimum breakdown  
voltage is 56V at 250 mA.  
The DS1631 series is also TTL compatible at V  
CC  
Features  
Y
The outputs are Darlington connected transistors. This al-  
lows high current operation (300 mA max) at low internal  
CMOS compatible inputs  
V
current levels since base drive for the output transistor  
Y
CC  
High impedance inputs  
PNP’s  
is obtained from the load in proportion to the required load-  
ing conditions. This is essential in order to minimize loading  
on the CMOS logic supply.  
Y
High output voltage breakdown  
56V min  
Y
High output current capability  
300 mA max  
Y
Same pin-outs and logic functions as DS75451 and  
DS75461 series circuits  
e
Typical V  
5V power is 28 mW with both outputs ON.  
CC  
V
operating range is 4.5V to 15V.  
CC  
The circuit also features output transistor protection if the  
supply is lost by forcing the output into the high impe-  
Y
Low V  
at 5V)  
power dissipation (28 mW both outputs ‘‘ON’’  
CC  
V
CC  
Connection Diagrams (Dual-In-Line and Metal Can Packages)  
TL/F/5816–1  
TL/F/5816–2  
TL/F/5816–4  
TL/F/5816–3  
Top View  
Order Number DS1631J-8  
or DS3631N  
Top View  
Order Number DS1632J-8  
or DS3632N  
Top View  
Order Number DS1634J-8  
or DS3634N  
Top View  
Order Number DS1633J-8  
or DS3633N  
See NS Package Number J08A or N08E  
TL/F/5816–5  
TL/F/5816–8  
TL/F/5816–6  
TL/F/5816–7  
Top View  
Top View  
Top View  
Top View  
(Pin 4 is electrically connected to the  
case.)  
(Pin 4 is electrically connected to the  
case.)  
(Pin 4 is electrically connected to the (Pin 4 is electrically connected to the  
case.)  
case.)  
Order Number DS1631H  
Order Number DS1632H  
Order Number DS1633H  
Order Number DS1634H  
See NS Package Number H08C  
C
1995 National Semiconductor Corporation  
TL/F/5816  
RRD-B30M105/Printed in U. S. A.  
12345678

中文翻译

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