DS32W THRU DS320W SOD123FL
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current – 3.0 A
Pinning
1.Cathode
2.Anode
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ꢀ
ꢀ
ꢀ
1
FEATURES
2
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Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
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SOD123FL
High forward surge current capability
Marking Code
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Lead free in comply with EU RoHS 2011/65/EU directives
DS32W
DS34W
K32
K34
S32
S34
DS36W
DS38W
K36
S36
MECHANICAL DATA
K38
S38
Case: SOD-123FL
Terminals: Solderable per MIL-STD-750, Method 2026
DS310W
DS312W
DS315W
DS320W
K310
K312
K315
K320
S310
S312
S315
S320
Approx. Weight: 15mg /0.00048oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols DS32W
DS34W
DS36W
DS38W
DS310W DS312W DS315W DS320W Units
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
70
120
84
150
105
150
200
140
200
V
RRM
RMS
V
V
V
A
A
Maximum RMS voltage
14
20
28
40
42
60
56
80
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
100
120
V
DC
3.0
IF(AV)
Peak Forward Surge Current, 8.3ms Single Half Sine-
wave Superimposed On Rated Load (JEDEC method)
80
70
IFSM
0.95
V
F
Maximum Instantaneous Forward Voltage at 3 A
0.55
0.70
0.85
V
Maximum Instantaneous Reverse Current TA = 25°C
0.5
10
0.3
5
IR
mA
at Rated DC Reverse Voltage
TA = 100°C
Typical Junction Capacitance(1)
C
j
250
160
pF
Typical Thermal Resistance (2)
Operating Junction Temperature Range
Storage Temperature Range
80
°C/W
R
θJA
-55 ~ +150
-55 ~ +150
Tj
°C
°C
T
stg
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
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