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DS32W_V01 PDF预览

DS32W_V01

更新时间: 2022-02-26 12:47:28
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
3页 409K
描述
Surface Mount Schottky Barrier Rectifier

DS32W_V01 数据手册

 浏览型号DS32W_V01的Datasheet PDF文件第2页浏览型号DS32W_V01的Datasheet PDF文件第3页 
DS32W THRU DS320W SOD123FL  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 20 to 200 V  
Forward Current – 3.0 A  
Pinning  
1.Cathode  
2.Anode  
1
FEATURES  
2
Metal silicon junction, majority carrier conduction  
For surface mounted applications  
Low power loss, high efficiency  
SOD123FL  
High forward surge current capability  
Marking Code  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
Lead free in comply with EU RoHS 2011/65/EU directives  
DS32W  
DS34W  
K32  
K34  
S32  
S34  
DS36W  
DS38W  
K36  
S36  
MECHANICAL DATA  
K38  
S38  
Case: SOD-123FL  
Terminals: Solderable per MIL-STD-750, Method 2026  
DS310W  
DS312W  
DS315W  
DS320W  
K310  
K312  
K315  
K320  
S310  
S312  
S315  
S320  
Approx. Weight: 15mg /0.00048oz  
Absolute Maximum Ratings and Electrical characteristics  
Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,  
for capacitive load, derate by 20 %  
Parameter  
Symbols DS32W  
DS34W  
DS36W  
DS38W  
DS310W DS312W DS315W DS320W Units  
Maximum Repetitive Peak Reverse Voltage  
20  
40  
60  
80  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
V
RRM  
RMS  
V
V
V
A
A
Maximum RMS voltage  
14  
20  
28  
40  
42  
60  
56  
80  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
100  
120  
V
DC  
3.0  
IF(AV)  
Peak Forward Surge Current, 8.3ms Single Half Sine-  
wave Superimposed On Rated Load (JEDEC method)  
80  
70  
IFSM  
0.95  
V
F
Maximum Instantaneous Forward Voltage at 3 A  
0.55  
0.70  
0.85  
V
Maximum Instantaneous Reverse Current TA = 25°C  
0.5  
10  
0.3  
5
IR  
mA  
at Rated DC Reverse Voltage  
TA = 100°C  
Typical Junction Capacitance1)  
C
j
250  
160  
pF  
Typical Thermal Resistance 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
80  
°C/W  
R
θJA  
-55 ~ +150  
-55 ~ +150  
Tj  
°C  
°C  
T
stg  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  

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