是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOC, SOC6,.17 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | Factory Lead Time: | 17 weeks |
风险等级: | 1.48 | 数据保留时间-最小值: | 40 |
耐久性: | 200000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-C6 |
JESD-609代码: | e3 | 长度: | 3.94 mm |
内存密度: | 2097152 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 64 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 6 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 32KX64 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOC |
封装等效代码: | SOC6,.17 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 260 | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.5 mm |
串行总线类型: | 1-WIRE | 子类别: | EEPROMs |
最大供电电压 (Vsup): | 5.25 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | C BEND |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 3.76 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
DS28EC20P+ | MAXIM |
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