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DS212W PDF预览

DS212W

更新时间: 2024-11-26 18:04:39
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
6页 82K
描述
Reverse Voltage Vr : 120 V;Forward Current Io : 2.0 A;Max Surge Current : 40 A;Forward Voltage Vf : 0.85 V;Reverse Current Ir : 300 uA;Recovery Time : N/A;Package / Case : SOD-123FH;Mounting Style : SMD/SMT

DS212W 数据手册

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DS22W  
THRU  
DS220W  
SurfaceMountSchottkyBarrierRectifier  
ForwardCurrent-2.0A  
ReverseVoltage-20to200V  
PINNING  
Features  
PIN  
1
DESCRIPTION  
Cathode  
• Metal silicon junction, majority carrier conduction  
• For surface mounted applications  
2
Anode  
• Low power loss, high efficiency  
S
2
2
0
1
2
• High forward surge current capability  
Top View  
Marking Code: DS22W  
DS24W  
• For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
---S22  
---S24  
---S26  
---S28  
DS26W  
DS28W  
DS210W ---S210  
DS212W ---S212  
DS215W ---S215  
DS220W ---S220  
Weight 17mg 0.0006 oz  
Simplified outline SOD-123FH and symbol  
Absolute Maximum Ratings and Electrical characteristics  
Ratings at 25 C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,  
for capacitive load, derate by 20 %  
Symbols  
DS22W  
20  
DS24W DS26W  
DS28W  
80  
DS210W DS212W DS215W DS220W  
Units  
V
Parameter  
Maximum Repetitive Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
40  
28  
40  
60  
42  
60  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
Maximum RMS voltage  
14  
56  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
20  
80  
100  
120  
V
IF(AV)  
2.0  
A
Peak Forward Surge Current,8.3ms  
Single Half Sine-wave Superimposed  
on Rated Load (JEDEC method)  
IFSM  
VF  
IR  
50  
40  
A
V
Max Instantaneous Forward Voltage at 2 A  
0.55  
0.70  
0.85  
0.95  
Maximum DC Reverse Current Ta = 25 C  
0.5  
10  
0.3  
5
mA  
at Rated DC Reverse Voltage  
Ta =100 C  
I2T  
Cj  
Tj  
A2S  
10.37  
Typical Current Squared Time  
Typical Junction Capacitance 1  
pF  
220  
80  
Operating Junction Temperature Range  
-55 ~ +125  
-55 ~ +150  
C
C
Storage Temperature Range  
Tstg  
2016-08  
REV:O1  
1
Measured at 1MHz and applied reverse voltage of 4 V D.C.  

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