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DS2016S

更新时间: 2024-11-24 20:54:23
品牌 Logo 应用领域
达拉斯 - DALLAS 输入元件静态存储器光电二极管输出元件内存集成电路
页数 文件大小 规格书
9页 252K
描述
Standard SRAM, 2KX8, 100ns, CMOS, PDSO24,

DS2016S 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.77
最长访问时间:100 ns其他特性:DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT
I/O 类型:COMMONJESD-30 代码:R-PDSO-G24
JESD-609代码:e0内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:24字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP24,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:3/5 V
认证状态:Not Qualified最大待机电流:0.000001 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.055 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

DS2016S 数据手册

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DS2016  
2k x 8 3V/5V Operation Static RAM  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
§ Low-power CMOS design  
§ Standby current  
A7  
A6  
1
2
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
VCC  
A8  
A9  
WE  
OE  
A10  
CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
-
-
-
50 nA max at tA = 25°C VCC = 3.0V  
100 nA max at tA = 25°C VCC = 5.5V  
1 µA max at tA = 60°C VCC = 5.5V  
A5  
3
A4  
4
A3  
5
§ Full operation for VCC = 5.5V to 2.7V  
§ Data retention voltage = 5.5V to 2.0V  
§ Fast 5V access time  
A2  
A1  
A0  
6
7
8
9
10  
11  
12  
DQ0  
DQ1  
DQ2  
GND  
-
-
DS2016 - 100  
DS2016 - 150  
100 ns  
150 ns  
§ Reduced-speed 3V access time  
-
-
DS2016 - 100  
DS2016 - 150  
250 ns  
250 ns  
DS2016 24-Pin DIP (600-mil)  
DS2016R 24-Pin SOIC (300-mil)  
§ Operating temperature range of -40°C to  
+85°C  
§ Full static operation  
§ TTL compatible inputs and outputs over  
voltage range of 5.5V to 2.7 volts.  
§ Available in 24-pin DIP and 24-pin SOIC  
packages  
§ Suitable for both battery operated and battery  
backup applications  
PIN DESCRIPTION  
A0 - A10  
- Address Inputs  
DQ0 - DQ7 - Data Input/Output  
CE  
- Chip Enable Input  
- Write Enable Input  
- Output Enable Input  
- Power Supply Input 2.7V - 5.5V  
- Ground  
WE  
OE  
VCC  
GND  
DESCRIPTION  
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access  
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single  
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE ) is used for  
device selection and can be used in order to achieve the minimum standby current mode, which facilitates  
both battery operated and battery backup applications. The device provides access times as fast as 100 ns  
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns  
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the  
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where  
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8  
SRAM and is pin-compatible with ROM and EPROM of similar density.  
1 of 9  
092399  

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