5秒后页面跳转
DS1645AB100 PDF预览

DS1645AB100

更新时间: 2024-11-22 23:48:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
12页 104K
描述
IC-1M CMOS NVRAM

DS1645AB100 数据手册

 浏览型号DS1645AB100的Datasheet PDF文件第2页浏览型号DS1645AB100的Datasheet PDF文件第3页浏览型号DS1645AB100的Datasheet PDF文件第4页浏览型号DS1645AB100的Datasheet PDF文件第5页浏览型号DS1645AB100的Datasheet PDF文件第6页浏览型号DS1645AB100的Datasheet PDF文件第7页 
DS1645Y/AB  
DS1645Y/AB  
Partitionable 1024K NV SRAM  
FEATURES  
PIN ASSIGNMENT  
10 years minimum data retention in the absence of  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
V
CC  
external power  
2
A15  
NC  
Data is automatically protected during power loss  
Directly replaces 128K x 8 volatile static RAM  
3
4
WE  
A13  
A8  
5
Write protects selected blocks of memory when pro-  
grammed  
A6  
6
A5  
7
A9  
Unlimited write cycles  
A4  
8
A11  
OE  
A3  
9
Low–power CMOS  
A2  
10  
11  
12  
13  
14  
15  
16  
A10  
CE  
Read and write access times as fast as 70 ns  
A1  
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
Lithium energy source is electrically disconnected to  
retainfreshness until power is applied for the firsttime  
DQ0  
DQ1  
DQ2  
GND  
Full +10% V operating range (DS1645Y)  
CC  
Optional +5% V operating range (DS1645AB)  
CC  
32–PIN ENCAPSULATED PACKAGE  
740 MIL EXTENDED  
°
Optional industrial temperature range of –40 C to  
°
+85 C, designated IND  
JEDEC standard 32–pin DIP package  
Low Profile Module (LPM) package  
NC  
A15  
A16  
PFO  
1
2
3
4
5
6
7
8
34  
NC  
NC  
A14  
A13  
A12  
A11  
A10  
A9  
A8  
A7  
A6  
A5  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
Fits into standard 68–pin PLCC surface mount-  
able socket  
V
CC  
WE  
OE  
CE  
250 mil package height  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ2  
DQ1  
DQ0  
GND  
9
Power Fail Output (PFO) warns system of  
10  
11  
12  
13  
14  
15  
16  
17  
impending V power failure  
CC  
A4  
A3  
A2  
A1  
A0  
34–PIN LOW PROFILE MODULE (LPM)  
ECopyright 1995 by Dallas Semiconductor Corporation.  
All Rights Reserved. For important information regarding  
patents and other intellectual property rights, please refer to  
Dallas Semiconductor data books.  
041497 1/12  

与DS1645AB100相关器件

型号 品牌 获取价格 描述 数据表
DS1645AB-100 DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 100ns, CMOS,
DS1645AB-100-IND ETC

获取价格

NVRAM (Battery Based)
DS1645AB-120 DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 120ns, CMOS,
DS1645AB-120-IND DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 120ns, CMOS,
DS1645AB-70 DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 70ns, CMOS,
DS1645AB-70-IND DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 70ns, CMOS,
DS1645AB-85IND MAXIM

获取价格

128KX8 NON-VOLATILE SRAM MODULE, 85ns, PDIP32, 0.740 INCH, PLASTIC, DIP-32
DS1645AB-85-IND DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 85ns, CMOS,
DS1645ABL-100 ETC

获取价格

NVRAM (Battery Based)
DS1645ABL-100-IND DALLAS

获取价格

Non-Volatile SRAM Module, 128KX8, 100ns, CMOS,