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DS1249W-100-IND PDF预览

DS1249W-100-IND

更新时间: 2024-10-29 22:15:39
品牌 Logo 应用领域
达拉斯 - DALLAS 静态存储器
页数 文件大小 规格书
8页 158K
描述
3.3V 2048kb Nonvolatile SRAM

DS1249W-100-IND 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.8
最长访问时间:100 nsJESD-30 代码:R-PDIP-T32
JESD-609代码:e0内存密度:2097152 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
端子数量:32字数:262144 words
字数代码:256000最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:IN-LINE电源:3.3 V
认证状态:Not Qualified最大待机电流:0.00015 A
子类别:SRAMs最大压摆率:0.05 mA
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

DS1249W-100-IND 数据手册

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DS1249W  
3.3V 2048kb Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
C 10 years minimum data retention in the  
absence of external power  
NC  
A16  
A14  
A12  
A7  
VCC  
A15  
A17  
WE  
A13  
A8  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
2
3
4
C Data is automatically protected during power  
loss  
5
C Unlimited write cycles  
A6  
6
A5  
A9  
7
8
9
10  
11  
12  
13  
14  
15  
16  
C Low-power CMOS operation  
C Read and write access times as fast as 100ns  
C Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
A11  
OE  
A10  
CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
GND  
C Optional industrial (IND) temperature range  
of -40LC to +85LC  
C JEDEC standard 32-pin DIP package  
32-Pin Encapsulated Package  
740mil Extended  
PIN DESCRIPTION  
A0–A17  
DQ0–DQ7  
CE  
WE  
OE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+3.3V)  
- Ground  
VCC  
GND  
NC  
- No Connect  
DESCRIPTION  
The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as  
262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry  
that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium  
energy source is automatically switched on and write protection is unconditionally enabled to prevent  
data corruption. There is no limit on the number of write cycles that can be executed, and no additional  
support circuitry is required for microprocessor interfacing.  
1 of 8  
103102  

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