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DS1249AB-85IND# PDF预览

DS1249AB-85IND#

更新时间: 2024-10-30 14:49:07
品牌 Logo 应用领域
美信 - MAXIM 静态存储器内存集成电路
页数 文件大小 规格书
8页 185K
描述
Non-Volatile SRAM Module, 256KX8, CMOS, 0.740 INCH, ROHS COMPLIANT, DIP-32

DS1249AB-85IND# 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.72
Is Samacsys:NJESD-30 代码:R-XDMA-P32
内存密度:2097152 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:PIN/PEG
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DS1249AB-85IND# 数据手册

 浏览型号DS1249AB-85IND#的Datasheet PDF文件第2页浏览型号DS1249AB-85IND#的Datasheet PDF文件第3页浏览型号DS1249AB-85IND#的Datasheet PDF文件第4页浏览型号DS1249AB-85IND#的Datasheet PDF文件第5页浏览型号DS1249AB-85IND#的Datasheet PDF文件第6页浏览型号DS1249AB-85IND#的Datasheet PDF文件第7页 
DS1249Y/AB  
2048k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
Cꢀ10 years minimum data retention in the  
absence of external power  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
VCC  
A15  
A17  
WE  
A13  
A8  
2
3
4
CꢀData is automatically protected during power  
loss  
5
CꢀUnlimited write cycles  
A6  
6
A5  
A9  
7
8
9
10  
11  
12  
13  
14  
15  
16  
CꢀLow-power CMOS operation  
CꢀRead and write access times as fast as 70 ns  
CꢀLithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
A11  
OE  
A10  
CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
GND  
CꢀFull Mꢀ10% VCC operating range (DS1249Y)  
CꢀOptional Mꢀ5% VCC operating range  
(DS1249AB)  
CꢀOptional industrial temperature range of  
-40LC to +85LC, designated IND  
CꢀJEDEC standard 32-pin DIP package  
32-Pin ENCAPSULATED PACKAGE  
740-mil EXTENDED  
PIN DESCRIPTION  
A0 - A17  
DQ0 - DQ7  
CE  
WE  
OE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+5V)  
- Ground  
VCC  
GND  
NC  
- No Connect  
DESCRIPTION  
The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as  
262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry  
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the  
lithium energy source is automatically switched on and write protection is unconditionally enabled to  
prevent data corruption. There is no limit on the number of write cycles which can be executed and no  
additional support circuitry is required for microprocessor interfacing.  
1 of 8  
083006  

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