5秒后页面跳转
DS1230Y-85-IND PDF预览

DS1230Y-85-IND

更新时间: 2024-09-30 20:15:47
品牌 Logo 应用领域
美信 - MAXIM 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 192K
描述
Non-Volatile SRAM Module, 32KX8, 85ns, CMOS, 0.740 INCH, EXTENDED MODULE, DIP-28

DS1230Y-85-IND 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:0.740 INCH, EXTENDED MODULE, DIP-28针数:28
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.23
最长访问时间:85 ns其他特性:10 YEARS DATA RETENTION PERIOD
JESD-30 代码:R-XDMA-T28JESD-609代码:e0
内存密度:262144 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:UNSPECIFIED
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
最大待机电流:0.005 A子类别:SRAMs
最大压摆率:0.085 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DS1230Y-85-IND 数据手册

 浏览型号DS1230Y-85-IND的Datasheet PDF文件第2页浏览型号DS1230Y-85-IND的Datasheet PDF文件第3页浏览型号DS1230Y-85-IND的Datasheet PDF文件第4页浏览型号DS1230Y-85-IND的Datasheet PDF文件第5页浏览型号DS1230Y-85-IND的Datasheet PDF文件第6页浏览型号DS1230Y-85-IND的Datasheet PDF文件第7页 
DS1230Y/AB  
256k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
C 10 years minimum data retention in the  
absence of external power  
A14  
A12  
A7  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
WE  
A13  
A8  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
C Data is automatically protected during power  
loss  
A6  
A5  
A9  
C Replaces 32k x 8 volatile static RAM,  
EEPROM or Flash memory  
A4  
A11  
OE  
A10  
CE  
DQ7  
DQ6  
DQ5  
A3  
A2  
C Unlimited write cycles  
A1  
C Low-power CMOS  
A0  
DQ0  
DQ1  
DQ2  
GND  
C Read and write access times as fast as 70 ns  
C Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
DQ4  
DQ3  
C Full M10% VCC operating range (DS1230Y)  
C Optional M5% VCC operating range  
(DS1230AB)  
28-Pin ENCAPSULATED PACKAGE  
740-mil EXTENDED  
C Optional industrial temperature range of  
-40LC to +85LC, designated IND  
C JEDEC standard 28-pin DIP package  
C PowerCap Module (PCM) package  
NC  
NC  
A14  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
1
2
3
NC  
NC  
NC  
A13  
A12  
A11  
A10  
A9  
4
5
6
7
8
9
NC  
VCC  
WE  
OE  
-
-
Directly surface-mountable module  
Replaceable snap-on PowerCap provides  
lithium backup battery  
CE  
A8  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
10  
11  
12  
13  
14  
15  
16  
17  
-
-
Standardized pinout for all nonvolatile  
SRAM products  
GND VBAT  
DQ2  
DQ1  
DQ0  
GND  
Detachment feature on PowerCap allows  
easy removal using a regular screwdriver  
34-Pin POWERCAP MODULE (PCM)  
(USES DS9034PC POWERCAP)  
PIN DESCRIPTION  
A0 - A14  
DQ0 - DQ7  
CE  
WE  
OE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+5V)  
- Ground  
VCC  
GND  
NC  
- No Connect  
1 of 12  
103002  

DS1230Y-85-IND 替代型号

型号 品牌 替代类型 描述 数据表
DS1230AB-85-IND MAXIM

功能相似

Non-Volatile SRAM Module, 32KX8, 85ns, CMOS, 0.740 INCH, EXTENDED MODULE, DIP-28
DS1230AB-85 DALLAS

功能相似

256k Nonvolatile SRAM

与DS1230Y-85-IND相关器件

型号 品牌 获取价格 描述 数据表
DS1230Y-AB DALLAS

获取价格

256k Nonvolatile SRAM
DS1230Y-FIR ROCHESTER

获取价格

32KX8 NON-VOLATILE SRAM MODULE, DMA34, POWERCAP MODULE-34
DS1230YL-100 ROCHESTER

获取价格

32KX8 NON-VOLATILE SRAM MODULE, 100ns, DMA34, POWERCAP MODULE-34
DS1230YL-100-IND ETC

获取价格

NVRAM (Battery Based)
DS1230YL-120 DALLAS

获取价格

Non-Volatile SRAM, 32KX8, 120ns, CMOS,
DS1230YL-120-IND ETC

获取价格

NVRAM (Battery Based)
DS1230YL-150 DALLAS

获取价格

Non-Volatile SRAM, 32KX8, 150ns, CMOS,
DS1230YL-150-IND DALLAS

获取价格

Non-Volatile SRAM, 32KX8, 150ns, CMOS,
DS1230YL-200 DALLAS

获取价格

Non-Volatile SRAM, 32KX8, 200ns, CMOS,
DS1230YL-200-IND DALLAS

获取价格

Non-Volatile SRAM, 32KX8, 200ns, CMOS,