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DS1230W-150-IND PDF预览

DS1230W-150-IND

更新时间: 2024-11-06 20:34:03
品牌 Logo 应用领域
美信 - MAXIM 静态存储器内存集成电路
页数 文件大小 规格书
11页 189K
描述
Non-Volatile SRAM Module, 32KX8, 150ns, CMOS, 0.740 INCH, EXTENDED MODULE, DIP-28

DS1230W-150-IND 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.740 INCH, EXTENDED MODULE, DIP-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.5Is Samacsys:N
最长访问时间:150 nsJESD-30 代码:R-XDMA-T28
JESD-609代码:e0内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM MODULE内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:UNSPECIFIED封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified最大待机电流:0.00015 A
子类别:SRAMs最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DS1230W-150-IND 数据手册

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DS1230W  
3.3V 256k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
C 10 years minimum data retention in the  
absence of external power  
VCC  
WE  
A13  
A8  
A14  
A12  
A7  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
C Data is automatically protected during power  
loss  
A6  
A9  
A5  
C Replaces 32k x 8 volatile static RAM,  
EEPROM or Flash memory  
A4  
A11  
OE  
A3  
A10  
CE  
A2  
C Unlimited write cycles  
A1  
C Low-power CMOS  
A0  
DQ7  
DQ6  
DQ0  
C Read and write access times as fast as 100ns  
C Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
DQ5  
DQ4  
DQ3  
DQ1  
DQ2  
GND  
28-Pin Encapsulated Package  
740-Mil Extended  
C Optional industrial temperature range of  
-40LC to +85LC, designated IND  
C JEDEC standard 28-pin DIP package  
C PowerCap Module (PCM) package  
NC  
NC  
A14  
A13  
A12  
A11  
A10  
A9  
34  
1
NC  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
2
3
NC  
NC  
NC  
VCC  
-
-
Directly surface-mountable module  
Replaceable snap-on PowerCap provides  
lithium backup battery  
4
5
6
7
8
9
WE  
OE  
CE  
-
-
Standardized pinout for all nonvolatile  
SRAM products  
A8  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
10  
11  
12  
13  
14  
15  
16  
17  
Detachment feature on PowerCap allows  
easy removal using a regular screwdriver  
GND VBAT  
DQ2  
DQ1  
DQ0  
GND  
34-Pin PowerCap Module (PCM)  
(Uses DS9034PC PowerCap)  
PIN DESCRIPTION  
A0 - A14  
DQ0 - DQ7  
CE  
WE  
OE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+3.3V)  
- Ground  
VCC  
GND  
NC  
- No Connect  
1 of 11  
103102  

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