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DS1216E PDF预览

DS1216E

更新时间: 2024-01-31 15:41:49
品牌 Logo 应用领域
达拉斯 - DALLAS /
页数 文件大小 规格书
13页 335K
描述
SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F

DS1216E 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.41
信息访问方法:PARALLEL中断能力:N
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
端子数量:28最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
电源:5 V认证状态:Not Qualified
子类别:Timer or RTC标称供电电压:5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL最短时间:1/100 SECOND
易失性:NOBase Number Matches:1

DS1216E 数据手册

 浏览型号DS1216E的Datasheet PDF文件第2页浏览型号DS1216E的Datasheet PDF文件第3页浏览型号DS1216E的Datasheet PDF文件第4页浏览型号DS1216E的Datasheet PDF文件第5页浏览型号DS1216E的Datasheet PDF文件第6页浏览型号DS1216E的Datasheet PDF文件第7页 
DS1216  
SmartWatch RAM DS1216B/C/D/H  
SmartWatch ROM DS1216E/F  
www.maxim-ic.com  
FEATURES  
C Keeps track of hundredths of seconds,  
seconds, minutes, hours, days, date of the  
month, months, and years  
C Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
C Converts standard 2k x 8 up to 512k x 8  
CMOS static RAMs into nonvolatile memory  
C Embedded lithium energy cell maintains  
watch information and retains RAM data  
C Watch function is transparent to RAM  
operation  
C Proven gas-tight socket contacts  
C Full M10% operating range  
C Operating temperature range: 0LC to +70LC  
C Accuracy is better than M1 minute/month @  
+25LC  
C Month and year determine the number of days  
in each month; leap-year compensation valid  
up to 2100  
ORDERING INFORMATION  
DS1216B, DS1216C, DS1216D, DS1216E,  
RST 1  
28 VCC  
27 WE  
DS1216F, DS1216H (See Figure 2 for letter suffix  
2
3
marking identification.)  
26 V
CC  
B
4
25  
PIN DESCRIPTION  
5
6
24  
23  
RST  
- RESET  
7
8
9
22 OE  
21  
20 CE  
DQ0 - Data Input/Output 0 [RAM]  
[A2]  
A2  
A0  
- Address Bit 2 (Read/Write [ROM])  
- Address Bit 0 (Data Input [ROM])  
[A0] 10  
DQ0 11  
19  
GND - Ground  
18  
CE  
- Conditioned Chip Enable  
12  
13  
17  
16  
OE  
- Output Enable  
WE  
Vcc  
- Write Enable  
GND 14  
15  
- Switched VCC for 28-/32-Pin RAM  
DS1216B/C/D/E  
VCCB - Switched VCC for 24-Pin RAM  
VCCD - Switched VCC for 28-Ppin RAM  
28-Pin Intelligent Socket  
PCB MODIFICATION REQUIRED  
PART  
RAM/ROM  
RAM DENSITY  
FOR DENSITY UPGRADE?  
DS1216B  
DS1216C  
DS1216D  
DS1216E  
DS1216F  
DS1216H  
RAM  
RAM  
RAM  
ROM  
ROM  
RAM  
16k/64k  
64k/256k  
256k/1M  
64k/256k  
64k/256k/1M  
1M/4M  
No/Yes  
No  
No/Yes  
No  
No  
No  
1 of 13  
111901  

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