DRV8329
SLVSGX4A – JUNE 2022 – REVISED OCTOBER 2022
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver
1 Features
3 Description
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65-V Three Phase Half-Bridge Gate Driver
– Drives 3 High-Side and 3 Low-Side N-Channel
MOSFETs (NMOS)
– 4.5 to 60-V Operating Voltage Range
– Supports 100% PWM Duty Cycle with Trickle
Charge pump
Bootstrap based Gate Driver Architecture
– 1000-mA Maximum Peak Source Current
– 2000-mA Maximum Peak Sink Current
Integrated Current Sense Amplifier with low input
offset (optimized for 1 shunt)
– Adjustable Gain (5, 10, 20, 40 V/V)
Hardware interface provides simple configuration
Ultra-low power sleep mode <1 uA at 25 C̊
4-ns (typ) propagation delay matching between
phases
Independent driver shutdown path (DRVOFF)
65-V tolerant wake pin (nSLEEP)
Supports negative transients upto -10V on SHx
6x and 3x PWM Modes
The DRV8329 family of devices is an integrated
gate driver for three-phase applications. The devices
provide three half-bridge gate drivers, each capable
of driving high-side and low-side N-channel power
MOSFETs. The device generates the correct gate
drive voltages using an internal charge pump and
enhances the high-side MOSFETs using a bootstrap
circuit. A trickle charge pump is included to support
100% duty cycle. The Gate Drive architecture
supports peak gate drive currents up to 1-A source
and 2-A sink. The DRV8329 can operate from a single
power supply and supports a wide input supply range
of 4.5 to 60 V.
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The 6x and 3x PWM modes allow for simple
interfacing to controller circuits. The device has
integrated accurate 3.3-V LDO that can be used
to power external controller and can be used as
reference for CSA. The configuration settings for the
device are configurable through hardware (H/W) pins.
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The DRV8329 devices integrate low-side current
sense amplifier that allow current sensing for sum of
current from all three phases of the drive stage.
Supports 3.3-V, and 5-V Logic Inputs
Accurate LDO (AVDD), 3.3 V ±3%, 80 mA
Compact QFN Packages and Footprints
Adjustable VDS overcurrent threshold through
VDSLVL pin
Adjustable deadtime through DT pin
Efficient System Design With Power Blocks
Integrated Protection Features
A low-power sleep mode is provided to achieve
low quiescent current by shutting down most of
the internal circuitry. Internal protection functions
are provided for undervoltage lockout, GVDD fault,
MOSFET overcurrent, MOSFET short circuit, and
overtemperature. Fault conditions are indicated on
nFAULT pin.
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– PVDD Undervoltage Lockout (PVDDUV)
– GVDD Undervoltage (GVDDUV)
– Bootstrap Undervoltage (BST_UV)
– Overcurrent Protection (VDS_OCP, SEN_OCP)
– Thermal Shutdown (OTSD)
Device Information(1)
PART NUMBER
DRV8329AREE
PACKAGE
VQFN (36)
VQFN (36)
BODY SIZE (NOM)
5.00 mm × 4.00 mm
5.00 mm × 4.00 mm
– Fault Condition Indicator (nFAULT)
DRV8329BREE(2)
2 Applications
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
(2) Device available for preview only
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Brushless-DC (BLDC) Motor Modules and PMSM
Cordless Garden and Power Tools, Lawnmowers
Appliances Fans and Pumps
Servo Drives
E-Bikes, E-Scooters, and E-Mobility
Cordless Vacuum Cleaners
4.5 to 60 V
DRV8329
PWM (6x/3x)
Gate
Drive
Drones
nSLEEP
3 ½-H Bridge
Gate Driver
M
Industrial & Logistics Robots, and RC Toys
HW
Current
Sense
nFAULT
SO
1x Current Sense
Built In Protection
DRV8329 Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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