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DRC5A43E0L PDF预览

DRC5A43E0L

更新时间： 2024-11-16 21:11:15
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 311K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE, SMINI3-F2-B, 3 PIN

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DRC5A43E0L 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.72
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：20JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DRC5A43E0L 数据手册

 浏览型号DRC5A43E0L的Datasheet PDF文件第2页浏览型号DRC5A43E0L的Datasheet PDF文件第3页 
DRC5A43E  
Silicon NPN epitaxial planar type  
For digital circuits  
Complementary to DRA5A43E  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini3-F2-B  
ꢀPin Name  
1: Base  
Packaging  
2: Emitter  
3: Collector  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
ꢀMarking Symbol: J7  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
Unit  
V
C
E
50  
50  
R1  
B
V
R2  
80  
mA  
mW  
°C  
Total power dissipation  
PT  
150  
R1  
R2  
4.7  
4.7  
kΩ  
kΩ  
Resistance value  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
2.0  
µA  
µA  
mA  
V
VCE = 10 V, IC = 5 mA  
20  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
0.25  
1.9  
V
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
4.7  
1.0  
kΩ  
Resistance ratio  
R1 / R2  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: April 2011  
Ver. AED  
1
123

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 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
DRC5A44E0L PANASONIC

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 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
DRC5A44W PANASONIC

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 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
DRC5A44W0L PANASONIC

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 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE

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