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DRC5614T0L PDF预览

DRC5614T0L

更新时间: 2024-11-11 21:19:11
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
5页 516K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN

DRC5614T0L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:8.04
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:20 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DRC5614T0L 数据手册

 浏览型号DRC5614T0L的Datasheet PDF文件第2页浏览型号DRC5614T0L的Datasheet PDF文件第3页浏览型号DRC5614T0L的Datasheet PDF文件第4页浏览型号DRC5614T0L的Datasheet PDF文件第5页 
Doc No. TT4-EA-12546  
Revision. 3  
Transistors with Built-in Resistor  
DRC5614T0L  
DRC5614T0L  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits / Muting  
2.0  
DRC2614T in SMini3 type package  
0.3  
0.13  
3
Features  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
0.9  
Marking Symbol:  
Packaging  
VT  
(0.65)(0.65)  
1.3  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
SMini3-F2-B  
SC-85  
Absolute Maximum Ratings Ta = 25 C  
Code  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Total power dissipation  
Junction temperature  
Operating ambient temperature  
Storage temperature  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
PT  
Tj  
Topr  
Tstg  
Rating  
30  
20  
5
600  
Unit  
V
V
Internal Connection  
V
C
mA  
mW  
°C  
°C  
°C  
R1  
B
150  
150  
-40 to +85  
-55 to +150  
E
Resistance  
value  
R1  
10  
k  
1 of 4  
Page  
Established : 2010-04-22  
Revised  
: 2014-03-20  

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