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DRC5152Z0L PDF预览

DRC5152Z0L

更新时间: 2024-11-11 21:12:03
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 448K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN

DRC5152Z0L 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.99Samacsys Description:DRC5152Z0L, Digital Transistor, NPN 100 MA 50 V 0.51 kΩ, Ratio Of 0.1, 3-Pin SMini3 F2 B
其他特性:BUILT IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DRC5152Z0L 数据手册

 浏览型号DRC5152Z0L的Datasheet PDF文件第2页浏览型号DRC5152Z0L的Datasheet PDF文件第3页浏览型号DRC5152Z0L的Datasheet PDF文件第4页 
Doc No. TT4-EA-11614  
Revision. 2  
Transistors with Built-in Resistor  
DRC5152Z0L  
DRC5152Z0L  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits  
Complementary to DRA5152Z  
DRC2152Z in SMini3 type package  
2.0  
0.3  
0.13  
3
Features  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
0.9  
Marking Symbol:  
Packaging  
N0  
(0.65)(0.65)  
1.3  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
SMini3-F2-B  
SC-85  
Absolute Maximum Ratings Ta = 25 C  
Code  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Total power dissipation  
Junction temperature  
Symbol  
VCBO  
VCEO  
IC  
PT  
Tj  
Topr  
Tstg  
Rating  
50  
50  
100  
150  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
C
R1  
B
150  
-40 to +85  
-55 to +150  
R2  
Operating ambient temperature  
Storage temperature  
°C  
°C  
E
k  
k  
Resistance R1 0.51  
R2  
5.1  
value  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = 10 μA, IE = 0  
VCEO IC = 2 mA, IB = 0  
Conditions  
Min Typ Max  
50  
50  
Unit  
V
V
μA  
μA  
mA  
-
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
2.0  
VCE = 10 V, IC = 5 mA  
20  
Collector-emitter saturation voltage  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
Vi(on) VCE = 0.2 V, IC = 5 mA  
Vi(off) VCE = 5 V, IC = 100 μA  
R1  
0.25  
V
V
V
k  
-
1.0  
Input voltage  
0.4  
Input resistance  
Resistance ratio  
-30% 0.51 +30%  
0.08 0.10 0.12  
R1/R2  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
Page 1 of 3  
Established : 2009-10-15  
Revised : 2014-03-14  

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