5秒后页面跳转
DRC5144W PDF预览

DRC5144W

更新时间: 2024-11-16 21:20:11
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 465K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2-B, 3 PIN

DRC5144W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.68其他特性:BUILT IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DRC5144W 数据手册

 浏览型号DRC5144W的Datasheet PDF文件第2页浏览型号DRC5144W的Datasheet PDF文件第3页浏览型号DRC5144W的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRC5144W  
Silicon NPN epitaxial planar type  
For digital circuits  
Complementary to DRA5144W  
DRC2144W in SMini3 type package  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Code  
SMini3-F2-B  
Pin Name  
1: Base  
2: Emitter  
3: Collector  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: NK  
Internal Connection  
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
C
E
R1  
B
50  
V
R2  
100  
mA  
mW  
°C  
Total power dissipation  
PT  
150  
R1  
R2  
47  
22  
kΩ  
kΩ  
Resistance value  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.2  
µA  
µA  
mA  
V
VCE = 10 V, IC = 5 mA  
60  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
0.25  
4.4  
V
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
1.2  
+30%  
2.60  
V
Input resistance  
R1  
–30%  
1.70  
47  
kΩ  
Resistance ratio  
R1 / R2  
2.14  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: December 2010  
Ver. CED  
1

与DRC5144W相关器件

型号 品牌 获取价格 描述 数据表
DRC5144W0L PANASONIC

获取价格

Small Signal Bipolar Transistor,
DRC5152Z PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DRC5152Z0L PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DRC5614T PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DRC5614T0L PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DRC5643T0L PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DRC5A13Z PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
DRC5A14E PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
DRC5A14T PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
DRC5A14T0L PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE