Datasheet > DRC4152Z

DRC4152Z

更新时间： 2024-01-25 21:37:02

品牌	Logo	应用领域
松下 - PANASONIC		开关晶体管
页数	文件大小	规格书
3页	404K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1-B-B, 3 PIN

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技术参数
数据手册

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DRC4152Z 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.8
其他特性：	BUILT IN BIAS RESISTOR RATIO IS 10	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	20	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.3 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

DRC4152Z 数据手册

DRC4152Z

Total pages

page

Tentative

DRC4152Z

Silicon NPN epitaxial planar type

For digital circuits

Marking Symbol : N0

Package Code : NS-B1-B-B

Absolute Maximum RatingsꢀTa = 25 °C

Internal Connection

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Symbol

VCBO

VCEO

Rating

Unit

100

300

150

°C

Total power dissipation

Junction temperature

Storage temperature

Tstg

-55 to +150

°C

kΩ

Resistance R1 0.51

R2 5.1

value

1. Emitter

2. Collector

3. Base

Pin name

Electrical CharacteristicsꢀTa = 25 °C±3 °C

Parameter

Symbol

Conditions

Min Typ Max

Unit

Collector-base voltage (Emitter open)

VCBO IC = 10 μA, IE = 0

Collector-emitter voltage (Base open)

VCEO IC = 2 mA, IB = 0

Collector-base cutoff current (Emitter open) ICBO

Collector-emitter cutoff current (Base open) ICEO

Emitter-base cutoff current (Collector open) IEBO

VCB = 50 V, IE = 0

VCE = 50 V, IB = 0

VEB = 6 V, IC = 0

0.1

0.5

2.0

μA

Forward current transfer ratio

hFE

VCE = 10 V, IC = 5 mA

Collector-emitter saturation voltage

VCE(sat) IC = 10 mA, IB = 0.5 mA

Vi(on) VCE = 0.2 V, IC = 5 mA

Vi(off) VCE = 5 V, IC = 100 μA

0.25

kΩ

1.0

Input voltage

0.4

Input resistance

Resistance ratio

-30% 0.51 +30%

0.08 0.10 0.12

R1/R2

Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring

methods for transistors.

Packing

Radial type : 5000 pcs / carton

2010.2.23

Prepared

2010.8.17

Revised

Semiconductor Company, Panasonic Corporation

12 3

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