Datasheet > DR65-0002-TBP

DR65-0002-TBP

更新时间： 2024-11-24 22:19:39

品牌	Logo	应用领域
泰科 - TE		衰减器
页数	文件大小	规格书
2页	224K
描述
Voltage Variable Absorptive Attenuator, 1700 - 2000 MHz

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中文翻译

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数据手册

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DR65-0002-TBP 数据手册

Voltage Variable Absorptive

Attenuator, 1700 - 2000 MHz

V 5.00

Features

SOW-16

Input IP3: +31 dBm Min (Full Attenuation Range)

Input IP3 is 15 -20 dB Better than GaAs

Linear Operation: +20 dBm Min.

Plastic SOIC, Wide Body, SMT Package

35 dB Dynamic Range (With 30 mA Bias Current)

Single Control Voltage

50 ohm Impedance

Linear Driver, DR65-0002, Available

Test Boards are Available

Tape and Reel Packaging Available

Description

M/A-COM's AT10-0017 is a PIN diode based voltage

variable attenuator. This device is in a SOIC-16, wide body

plastic surface mount package. These attenuators have

linear operating power and input intercept point levels 15 -

20 dB better than GaAs FET MMIC voltage variable

attenuators. They are ideally suited for use where low

distortion, high linear operating power and high dynamic

range are required. These devices are optimized for the

PCS frequency band, but exhibit excellent performance and

repeatability over the entire specified frequency band. The

AT10-0017 is ideally suited for wireless communications

systems.

Package outline conforms to JEDEC standard MS-013AA.

Electrical Specifications: T_A= 25°C

Parameter

Test Conditions

Frequency

Units

Min

Typical

Max

Insertion Loss

0 volts

1700-2000 MHz

1930 - 1990 MHz

—

2.5

3.5

3.0

Attenuation

(Above Loss)

10 mA bias current

0 to 30 dB attenuation

1700-2000 MHz

1930 - 1990 MHz

—

Frequency

Flatness

1700-2000 MHz

1930 - 1990 MHz

—

1.5

0.4

2.0

0.6

VSWR

1700-2000 MHz

1930 - 1990 MHz

Ratio

——-

1.6:1

1.5:1

1.8:1

1.7:1

Switching Speed

Linear Operation

Input IP₃

50% Control to 90%/10% RF

1700-2000 MHz

µs

—

+20

—-

3.0

—

dBm

—

Two-tone inputs up to +10 dBm

—

+31

—

I _Control

中文翻译

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