Datasheet > DR1200

DR1200

更新时间： 2024-11-24 03:30:27

品牌	Logo	应用领域
EDI		高压快速恢复二极管
页数	文件大小	规格书
2页	45K
描述
FAST RECOVERY HIGH VOLTAGE 25mA MINIATURE SILICON RECTIFIERS

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中文翻译

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技术参数
数据手册

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DR1200 技术参数

生命周期：	Contact Manufacturer	包装说明：	R-PDIP-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.74	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	18 V	JESD-30 代码：	R-PDIP-W2
JESD-609代码：	e4	最大非重复峰值正向电流：	3 A
元件数量：	1	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大输出电流：	0.025 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
认证状态：	Not Qualified	最大重复峰值反向电压：	12000 V
最大反向恢复时间：	0.15 µs	子类别：	Rectifier Diodes
表面贴装：	NO	技术：	AVALANCHE
端子面层：	SILVER	端子形式：	WIRE
端子位置：	DUAL	Base Number Matches：	1

DR1200 数据手册

DR 300 DR1500

FAST RECOVERY HIGH VOLTAGE 25mA

MINIATURE SILICON RECTIFIERS

SMALL SIZE MOLDED PACKAGE

PRV 3,000 TO 15,000 VOLTS

AVALANCHE CHARACTERISTICS

LOW LEAKAGE

EDI

PRV

Volts

COLOR

Type

CODE DOT

DR300

DR500

DR800

DR1000

DR1200

3,000

5,000

Orange

Green

Gray

8,000

10,000

12,000

15,000

Red

Blank

White

DR1500

ELECTRICAL CHARACTERISTICS (at T =25 C Unless Otherwise Specified)

(Fig.1)

25 mA

3 Amp

Average Rectified Forward Current @ 50 C, I_O

Max. Peak Surge Current, I

(8.3ms) (Fig.2)

FSM

100nanosec

Max. Reverse Recovery, T (Fig.4)

26Volts

Max. Forward Voltage Drop @ 25 m A, V

Max. DC Reverse Current @ PRV and 25 C, I

Max. DC Reverse Current @ PRV and 100

C, I

-55 C to +125 C

Ambient Operating Temperature Range, T

Storage Temperature Range, T

STG

-55 C to +150 C

NOTES:

1.It is recommended that a proper heat sink be used on the terminals of this device between the body and

soldering point to prevent damage from excess heat.

2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.

EDI reserves the right to change these specifications at any time without notice.

中文翻译

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