Datasheet > DPJ50XS1800NA

DPJ50XS1800NA

更新时间： 2024-11-28 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	543K
描述
HiperDynFRED系列提供改进的正向电压特性和高达1200V的击穿电压。

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数据手册

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DPJ50XS1800NA 数据手册

DPJ50XS1800NA

V_RRM

I_FAV

t_rr

1800V

25A

HiPerDynFRED

= 2x

30ns

High Performance Dynamic Fast Recovery Diode

Extreme Low Loss and Soft Recovery

Parallel legs with series connected dice

Part number

DPJ50XS1800NA

Backside: isolated

SOT-227B (minibloc)

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

3000

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20200211d

12 3 4 5

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