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DPG60C300HB PDF预览

DPG60C300HB

更新时间: 2024-11-26 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
5页 380K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DPG60C300HB 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.67其他特性:FREEWHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.06 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:340 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DPG60C300HB 数据手册

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DPG60C300HB  
=
VRRM  
IFAV  
trr  
300V  
30A  
HiPerFRED²  
= 2x  
=
35ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Common Cathode  
Part number  
DPG60C300HB  
Backside: cathode  
1
2
3
TO-247  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Very soft recovery behaviour  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20200211c  
© 2020 IXYS all rights reserved  

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