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DPG10I400PA PDF预览

DPG10I400PA

更新时间: 2024-11-30 21:17:15
品牌 Logo 应用领域
IXYS 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
5页 130K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2

DPG10I400PA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AC
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.44
Samacsys Description:High Performance Fast Recovery Diode其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.03 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.045 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DPG10I400PA 数据手册

 浏览型号DPG10I400PA的Datasheet PDF文件第2页浏览型号DPG10I400PA的Datasheet PDF文件第3页浏览型号DPG10I400PA的Datasheet PDF文件第4页浏览型号DPG10I400PA的Datasheet PDF文件第5页 
DPG10I400PA  
VRRM  
IFAV  
trr  
=
=
=
400V  
10A  
HiPerFRED²  
45ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
Part number  
DPG10I400PA  
Backside: cathode  
3
1
TO-220  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Antiparallel diode for high frequency  
switching devices  
Industry standard outline  
RoHS compliant  
Very short recovery time  
Antisaturation diode  
Epoxy meets UL 94V-0  
Improved thermal behaviour  
Very low Irm-values  
Snubber diode  
Free wheeling diode  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20131101a  
© 2013 IXYS all rights reserved  

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