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DPG10I200PA PDF预览

DPG10I200PA

更新时间: 2024-11-30 12:28:19
品牌 Logo 应用领域
IXYS 整流二极管快恢复二极管PC局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 133K
描述
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

DPG10I200PA 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:4.02Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:237891
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220
Samacsys Released Date:2020-02-28 13:47:38Is Samacsys:N
其他特性:FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.98 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:140 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DPG10I200PA 数据手册

 浏览型号DPG10I200PA的Datasheet PDF文件第2页浏览型号DPG10I200PA的Datasheet PDF文件第3页浏览型号DPG10I200PA的Datasheet PDF文件第4页 
DPG 10 I 200 PA  
VRRM  
IFAV  
trr  
=
=
=
200 V  
HiPerFRED²  
A
10  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
35 ns  
Part number  
DPG 10 I 200 PA  
3
1
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-220  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
200  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 200V  
VR = 200V  
TVJ  
1
TVJ = 150°C  
TVJ 25°C  
0.06 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
10A  
20A  
10A  
20A  
=
1.27  
1.45  
0.98  
1.17  
10  
V
V
V
V
A
V
Ω
T
VJ = 150°C  
IFAV  
VF0  
rF  
TC = 145°C  
TVJ = 175°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
0.74  
17.7  
for power loss calculation only  
slope resistance  
m
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
2.30 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
175  
65  
°C  
W
A
TC  
=
=
=
25°C  
45°C  
25°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
TVJ  
140  
t = 10 ms (50 Hz), sine  
3
5.5  
35  
A
A
IF = 10A; VR = 130V  
-diF/dt = 200 A/µs  
TVJ = 125°C  
TVJ 25°C  
TVJ = 125°C  
TVJ 25°C  
reverse recovery time  
junction capacitance  
trr  
=
ns  
ns  
pF  
45  
CJ  
VR = 150 V; f = 1 MHz  
=
15  
IXYS reserves the right to change limits, conditions and dimensions.  
20090323a  
Data according to IEC 60747and per diode unless otherwise specified  
2009 IXYS all rights reserved  
©

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