DP0150ALP4 / DP0150BLP4
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Die Construction
Ultra-Small Leadless Surface Mount Package
Ultra-low Profile (0.40mm max)
Complementary NPN Type Available (DN0150ALP4 /
DN0150BLP4)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0008 grams (approximate)
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Qualified to AEC-Q 101 Standards for High Reliability
1
3
E
C
2
B
Top View
Device Schematic
Bottom View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
-50
V
Collector-Emitter Voltage
-5
V
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current
-100
-200
-30
mA
mA
mA
ICM
IB
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Symbol
PD
Value
450
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
278
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-50
-50
-5
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—
—
—
—
—
—
—
—
—
-0.1
-0.1
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -50V, IE = 0
VEB = -5V, IC = 0
μA
μA
Emitter Cut-Off Current
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
—
120
200
-0.15
—
—
-0.3
240
400
V
VCE(SAT)
hFE
IC = -100mA, IB = -10mA
VCE = -6V, IC = -2mA
DP01510ALP4
DP01510BLP4
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SMALL SIGNAL CHARACTERISTICS
VCE = -10V, IE = 1mA
f = 30MHz
Transition Frequency
80
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—
MHz
fT
V
CB = -10V, IE = 0,
Output Capactiance
1.6
pF
Cob
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated
DP0150ALP4 / DP0150BLP4
Document number: DS31493 Rev. 3 - 2