Datasheet > DP0150ADJ

DP0150ADJ

更新时间： 2022-03-28 20:03:25

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	89K
描述
DUAL PNP SURFACE MOUNT TRANSISTOR

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DP0150ADJ 数据手册

DP0150ADJ / DP0150BDJ

DUAL PNP SURFACE MOUNT TRANSISTOR

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Features

Mechanical Data

•

Epitaxial Planar Die Construction

•

Case: SOT-963

Ideally Suited for Automated Assembly Processes

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Ultra Small Package

•

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.0027 grams (approximate)

SOT-963

Top View

Device Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

Value

-50

Unit

V_CBO

V_CEO

V_EBO

I_C

-50

Collector-Emitter Voltage

-5

Emitter-Base Voltage

Collector Current - Continuous

Base Current

-100

-30

I_B

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

P_D

Value

300

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient (Note 3)

Operating and Storage Temperature Range

417

R_θ

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

Min

Typ

Max

Unit

Test Condition

-50

-5

—

-0.1

V(_BR)CBO

V(_BR)CEO

V(_BR)EBO

I_CBO

I_C= -10μA, I_E= 0

I_C= -1mA, I_B= 0

I_E= -10μA, I_C= 0

V_CB= -50V, I_E= 0

V_EB= -5V, I_C= 0

μA

Emitter Cut-Off Current

I_EBO

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

DC Current Gain

—

120

200

-0.15

—

-0.3

240

400

V_CE(SAT)

h_FE

I_C= -100mA, I_B= -10mA

V_CE= -6V, I_C= -2mA

DP0150ADJ

DP0150BDJ

—

SMALL SIGNAL CHARACTERISTICS

V_CE= -10V, I_E= 1mA

f = 30MHz

Transition Frequency

—

MHz

f_T

_CB= -10V, I_E= 0,

Output Capactiance

1.6

C_ob

f = 1MHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%

1 of 4

www.diodes.com

April 2009

DP0150ADJ / DP0150BDJ

Document number: DS31485 Rev. 3 - 2

12 3 4

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