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DN500P PDF预览

DN500P

更新时间: 2024-11-14 12:56:19
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
3页 55K
描述
Extremely low collector-to-emitter saturation voltage

DN500P 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):40最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):1.1 W
子类别:Other Transistors表面贴装:YES

DN500P 数据手册

 浏览型号DN500P的Datasheet PDF文件第2页浏览型号DN500P的Datasheet PDF文件第3页 
DN500P  
Semiconductor  
NPN Silicon Transistor  
Description  
· Extremely low collector-to-emitter saturation voltage  
( VCE(SAT)=0.2V Typ. @IC /IB=3A/150mA)  
· Suitable for low voltage large current drivers  
· Complementary pair with DP500P  
· Switching Application  
Ordering Information  
Type NO.  
Marking  
Package Code  
SOT-223  
DN500P  
N5  
: monthly code  
Outline Dimensions  
unit : mm  
PIN Connections  
1. Base  
2. Collector  
3. Emitter  
KST-7002-002  
1

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