DN050S

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	267K
描述
Extremely low collector-to-emitter saturation voltage

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中文翻译

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数据手册

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DN050S 数据手册

DN050S

NPN Silicon Transistor

Features

• Extremely low collector-to-emitter

saturation voltage

PIN Connection

( V_CE(SAT)=0.07V Typ. @I_C/I_B=100mA/10mA)

• Suitable for low voltage large current drivers

• Complementary pair with DP050S

• Switching Application.

SOT-23F

Ordering Information

Type NO.

Marking

Package Code

N02 □

DN050S

SOT-23F

①

②

① Device Code ② Year&Week Code

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

500

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_E=50μA, I_C=0

V_CB=12V, I_E=0

0.1

450

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE1

V_CE=1V, I_C=100mA

V_CE=1V, I_C=500mA

I_C=100mA, I_B=10mA

V_CE=5V, I_C=20mA

V_CB=10V, I_E=0, f=1MHz

200

DC current gain

h_FE2

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.25

1.2

120

4.5

MHz

Collector output capacitance

C_ob

KSD-T5C073-000

12 3 4

中文翻译

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