Datasheet > DN0150ADJ

DN0150ADJ

更新时间： 2024-09-23 09:54:27

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	84K
描述
DUAL NPN SURFACE MOUNT TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DN0150ADJ 数据手册

DN0150ADJ / DN0150BDJ

DUAL NPN SURFACE MOUNT TRANSISTOR

Please click here to visit our online spice models database.

Features

Mechanical Data

•

Epitaxial Planar Die Construction

•

Case: SOT-963

Ideally Suited for Automated Assembly Processes

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Ultra Small Package

•

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.0027 grams (approximate)

SOT-963

Top View

Device Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current – Continuous

Base Current

100

I_B

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

P_D

Value

300

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient (Note 3)

Operating and Storage Temperature Range

417

R_θ

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

Min

Typ

Max

Unit

Test Condition

—

0.1

V(_BR)CBO

V(_BR)CEO

V(_BR)EBO

I_CBO

I_C= 10μA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10μA, I_C= 0

V_CB= 60V, I_E= 0

V_EB= 5V, I_C= 0

μA

Emitter Cut-Off Current

I_EBO

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

DC Current Gain

—

120

200

0.10

—

0.25

240

400

V_CE(SAT)

h_FE

I_C= 100mA, I_B= 10mA

V_CE= 6V, I_C= 2mA

DN0150ADJ

DN0150BDJ

—

SMALL SIGNAL CHARACTERISTICS

_CE= 10V, I_E= -1mA

Transition Frequency

—

MHz

f_T

f = 30MHz

f = 1MHz

_CB= 10V, I_E= 0,

Output Capactiance

1.3

C_ob

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%

1 of 4

www.diodes.com

April 2009

DN0150ADJ / DN0150BDJ

Document number: DS31484 Rev. 3 - 2

12 3 4

中文翻译

下载PDF

与DN0150ADJ相关器件

型号	品牌	获取价格	描述	数据表
DN0150ADJ-7	DIODES	获取价格	DUAL NPN SURFACE MOUNT TRANSISTOR
DN0150ALP4	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN0150ALP4_11	DIODES	获取价格	50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN0150ALP4-7	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN0150ALP4-7B	DIODES	获取价格	50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN0150BDJ-7	DIODES	获取价格	DUAL NPN SURFACE MOUNT TRANSISTOR
DN0150BLP4	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN0150BLP4-7	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN0150BLP4-7B	DIODES	获取价格	50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DN01A0005	MOLEX	获取价格	Interconnection Device

与DN0150ADJ相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

6
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

69

产品中心

服务支持

精选活动

关于我们

帮助中心

DN0150ADJ

DN0150ADJ 数据手册

与DN0150ADJ相关器件

与DN0150ADJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DN0150ADJ

DN0150ADJ 数据手册

与DN0150ADJ相关器件

与DN0150ADJ相关文章

您还可以找

您在本页遇到什么问题？