Datasheet > DMT3009UDT

DMT3009UDT

更新时间： 2024-11-13 14:55:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	496K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMT3009UDT 数据手册

DMT3009UDT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Ultra Low Gate Threshold Voltage

I_DMax

Low On-Resistance

Device

BV_DSS

R_DS(ON)Max

T_C= +25°C

Low Input Capacitance

30A

25A

11.1mΩ @ V_GS= 10V

15.0mΩ @ V_GS= 4.5V

Fast Switching Speed

Q1& Q2

30V

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Mechanical Data

Applications



Case: V-DFN3030-8



General Purpose Interfacing Switch

Power Management Functions

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe. Solderable



per MIL-STD-202, Method 208

Weight: 0.02 grams (Approximate)



ESD PROTECTED

V-DFN3030-8 (Type KS)

S2 S2 S2 G2

S1/D2

Gate Protection

Diode

Gate Protection

Diode

PIN 1

D1 D1 D1 G1

PIN 1

Bottom View

Internal Schematic

Top View

Bottom View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMT3009UDT-7

Case

V-DFN3030-8 (Type KS)

Tape Width

Tape Pitch

8mm

Packaging

1,500/Tape & Reel

12mm

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

1 of 8

www.diodes.com

October 2020

DMT3009UDT

Document number: DS41985 Rev. 2 - 2

12 3 4 5 6 7 8

中文翻译

下载PDF

与DMT3009UDT相关器件

型号	品牌	获取价格	描述	数据表
DMT3009UFVW	DIODES	获取价格	30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT-301-1	DATADELAY	获取价格	Refresh Timer, 1 Timer(s), CMOS, LOW PROFILE, DIP-14
DMT301-1	ETC	获取价格	Logic IC
DMT-301-10	DATADELAY	获取价格	Refresh Timer, 1 Timer(s), CMOS, LOW PROFILE, DIP-14
DMT301-10	ETC	获取价格	Logic IC
DMT-301-10MC3	DATADELAY	获取价格	Refresh Timer, 1 Timer(s), CMOS, CDSO16
DMT-301-11	DATADELAY	获取价格	Refresh Timer, 1 Timer(s), CMOS, LOW PROFILE, DIP-14
DMT301-11	ETC	获取价格	Logic IC
DMT-301-12	DATADELAY	获取价格	Refresh Timer, 1 Timer(s), CMOS, LOW PROFILE, DIP-14
DMT301-12	ETC	获取价格	Logic IC

与DMT3009UDT相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

DMT3009UDT

DMT3009UDT 数据手册

与DMT3009UDT相关器件

与DMT3009UDT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMT3009UDT

DMT3009UDT 数据手册

与DMT3009UDT相关器件

与DMT3009UDT相关文章

您还可以找

您在本页遇到什么问题？